Electron microscopy of charge density wave defects in 1T-TaS2 and 1T-TaSe2
We have studied the charge density wave pinned by defects in the layer compounds 1T-TaS2 and 1T-TaSe2. The number of pinning defects is controlled by irradiating the samples with high energy electrons (2 MeV). Electron microscopy observations, both high resolution and dark field images, reveal the effect of pinning on the domains and the boundaries of the charge density wave.
KeywordsDark Field Image Charge Density Wave Irradiation Dose Increase High Voltage Electron Microscope Atomic Defect
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