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Electron microscopy of charge density wave defects in 1T-TaS2 and 1T-TaSe2

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Charge Density Waves in Solids

Part of the book series: Lecture Notes in Physics ((LNP,volume 217))

Abstract

We have studied the charge density wave pinned by defects in the layer compounds 1T-TaS2 and 1T-TaSe2. The number of pinning defects is controlled by irradiating the samples with high energy electrons (2 MeV). Electron microscopy observations, both high resolution and dark field images, reveal the effect of pinning on the domains and the boundaries of the charge density wave.

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References

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Authors and Affiliations

  1. Laboratoire d'Optique Electronique du CNRS, BP 4347, 31055, Toulouse Cedex, France

    G. Salvettil, R. Ayroles & C. Roucau

  2. Technical Research Center of Finland, 02150, Espoo, Finland

    H. Mutka

  3. Laboratoire de Chimie des Solides, 44072, Nantes Cedex, France

    P. Molinié

Authors
  1. G. Salvettil
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  2. R. Ayroles
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  3. C. Roucau
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  4. H. Mutka
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  5. P. Molinié
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Editor information

Gyula Hutiray Jenö Sólyom

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© 1985 Springer-Verlag

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Salvettil, G., Ayroles, R., Roucau, C., Mutka, H., Molinié, P. (1985). Electron microscopy of charge density wave defects in 1T-TaS2 and 1T-TaSe2 . In: Hutiray, G., Sólyom, J. (eds) Charge Density Waves in Solids. Lecture Notes in Physics, vol 217. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-13913-3_192

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  • DOI: https://doi.org/10.1007/3-540-13913-3_192

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-13913-3

  • Online ISBN: 978-3-540-39137-1

  • eBook Packages: Springer Book Archive

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