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Sputtered material

  • Malcolm J. Thompson
Chapter
Part of the Topics in Applied Physics book series (TAP, volume 55)

Abstract

It is clear that bombardment effects now dominate the discussion of growth in sputtered a-Si : H. With a more quantifiable measurement of the bombarding species, controlled deposition conditions can be used to fabricate better quality material. It must be recognized that the electron and H ion species are controlled by the alternating rf voltages at the target, plasma and substrate. Provided with this improved understanding and control of growth conditions, the precise physical properties of sputtered a-Si : H can be evaluated. Resolving issues of heterogeneity and the relationship between certain defects, hydrogen incorporation sites and recombination processes still provide a considerable challenge.

Keywords

Glow Discharge Hydrogen Content Schottky Barrier Plasma Potential Hydrogen Partial Pressure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 4.1 a)
    J. W. Coburn: Plasma Etching and Reactive Ion Etching (AVS Monograph, New York 1982)Google Scholar
  2. 4.1 b)
    E. W. B. Gill, A. von Engel: Proc. Roy. Soc. A 192, 446 (1948)ADSCrossRefGoogle Scholar
  3. 4.2
    See, for example, B. Chapman: Glow Discharge Processes (Wiley, New York 1980)Google Scholar
  4. 4.3
    H. F. Winters: Radiation Effects on Solid Surfaces, ed. by M. Kaminsky, Adv. in Chemistry Series No. 158 (American Chemical Society 1976)Google Scholar
  5. 4.4
    G. S. Anderson, G. K. Wehner: J. Appl. Phys. 31, 2305 (1960)ADSCrossRefGoogle Scholar
  6. 4.5
    E. B. Henschke, J. Derby: J. Appl. Phys. 34, 2458 (1963)ADSCrossRefGoogle Scholar
  7. 4.6 a)
    A. L. Southern, W. R. Willis, M. T. Robinson: J. Appl. Phys. 34, 153 (1963)ADSCrossRefGoogle Scholar
  8. 4.6 b)
    S. P. Wolsky, E. J. Zdanuk: J. Appl. Phys. 32, 782 (1982)ADSCrossRefGoogle Scholar
  9. 4.6 c)
    J. Comas, E. A. Wolicki: Electrochem. Soc. 117, 1197 (1970)CrossRefGoogle Scholar
  10. 4.7
    W. D. Davis, T. A. Vanderslice: Phys. Rev. 131, 219 (1963)ADSCrossRefGoogle Scholar
  11. 4.8
    J. W. Coburn, E. Kay: J. Appl. Phys. 43, 4965 (1972)ADSCrossRefGoogle Scholar
  12. 4.9
    R. H. Bruce: J. Appl. Phys. 52, 7064 (1981)ADSCrossRefGoogle Scholar
  13. 4.10
    W. A. Chupka, J. Berkowitz: J. Chem. Phys. 48, 5769 (1968)Google Scholar
  14. 4.11
    W. Eckstein, F. E. P. Matschke, H. Verbeck: J. Nuc. Mat. 63, 199 (1976)ADSCrossRefGoogle Scholar
  15. 4.12
    R. C. Ross, R. Messier: AIP Conf. Proc. No. 73, 53 (1981)Google Scholar
  16. 4.13
    G. Lemperière, J. M. Poitevin, J. Tardy: Proc. 8th Intern. Vacuum Congress, Cannes (1980)Google Scholar
  17. 4.14
    J. L. Decroix: Introduction to Theory of Ionized Gases (Wiley, New York 1960) p. 128Google Scholar
  18. 4.15
    L. G. Christopherou: Atomic and Molecular Radiation Physics (Wiley, New York 1971) p. 283Google Scholar
  19. 4.16
    L. G. H. Huxley, R. W. Crompton: The Diffusion and Drift of Electrons in Gases (Wiley, New York 1974) p. 611Google Scholar
  20. 4.17 a)
    L. J. Kieffer, G. H. Dunn: Rev. Mod. Phys. 38, 1 (1966)ADSCrossRefGoogle Scholar
  21. 4.17 b)
    J. A. Thornton, A. S. Penfold: In Thin Film Processes, ed. by J. L. Vossen, W. Kern (Academic, New York 1978) p. 84Google Scholar
  22. 4.17 c)
    J. Tardy: PhD Thesis, Lyon (1982)Google Scholar
  23. 4.18
    M. A. Paesler, T. Okumura, W. Paul: J. Vac. Sci. Tech. 17, 1332 (1980)ADSCrossRefGoogle Scholar
  24. 4.19
    A. Matsuda, K. Nakagawa, K. Tanaka, M. Matsumura, S. Yamasaki, H. Okushi, S. Iizima: J. Non-Cryst. Solids 35/36, 183 (1980)CrossRefGoogle Scholar
  25. 4.20
    D. J. Tardy, J. M. Poitevin, G. Lemperière: J. Phys. D 14, 339 (1981)ADSGoogle Scholar
  26. 4.21
    J. W. Coburn, E. Kay: Appl. Phys. Lett. 18, 435 (1971)ADSCrossRefGoogle Scholar
  27. 4.22
    G. Turban, Y. Catherine, B. Grolleau: Thin Solid Films 67, 309 (1980)ADSCrossRefGoogle Scholar
  28. 4.23
    D. A. Anderson, G. Moddel, M. A. Paesler, W. Paul: J. Vac. Sci. Tech. 16, 902 (1979)Google Scholar
  29. 4.24
    W. D. Westwood: J. Vac. Sci. Tech. 15, 1 (1978)ADSCrossRefGoogle Scholar
  30. 4.25 a)
    I. Brodie, L. T. Lamont, D. O. Myers: J. Vac. Sci. Tech. 6, 124 (1969)ADSCrossRefGoogle Scholar
  31. 4.25 b)
    H. R. Koenig, L. I. Maissel: IBM J. Res. Dev. 14, 168 (1970)CrossRefGoogle Scholar
  32. 4.26
    D. DiMaria, L. M. Ephrath, D. R. Young: J. Appl. Phys. (1979)Google Scholar
  33. 4.27
    A. H. Eltoukhy, J. E. Greene: J. Appl. Phys. 51, 4450 (1980)ADSCrossRefGoogle Scholar
  34. 4.28
    H. Strack: J. Appl. Phys. 34, 2405 (1963)ADSCrossRefGoogle Scholar
  35. 4.29 a)
    J. S. Logan, J. H. Keller, R. G. Simmons: J. Vac. Sci. Tech. 14, 92 (1977)ADSCrossRefGoogle Scholar
  36. 4.29 b)
    R. K. Waits: In Thin Film Processes, ed. by J. V. Vossen, W. Kern (Academic, New York 1978) p. 131Google Scholar
  37. 4.30
    R. C. Ross: PhD Thesis, University of Pennsylvania (1981)Google Scholar
  38. 4.31
    J. A. Thornton: J. Vac. Sci. Tech. 11, 666 (1974)ADSCrossRefGoogle Scholar
  39. 4.32
    R. C. Ross, R. Messier: J. Appl. Phys. 52, 5329 (1981)ADSCrossRefGoogle Scholar
  40. 4.33
    R. Bellisent, A. Chenevas-Paule, M. Roth: Physica B 2 C 117 & 118, 941 (1983)CrossRefGoogle Scholar
  41. 4.34
    R. Messier, R. C. Ross: J. Appl. Phys. 53, 6220 (1982)ADSCrossRefGoogle Scholar
  42. 4.35
    J. Shirafuji, H. Matsui, A. Narukawa, Y. Inuishi: Appl. Phys. Lett. 41, 535 (1982)ADSCrossRefGoogle Scholar
  43. 4.36
    M. Noda, H. Ishida: Japan J. Appl. Phys. 21, L 195 (1982)ADSCrossRefGoogle Scholar
  44. 4.37
    R. Messier, R. C. Ross: J. Appl. Phys., in pressGoogle Scholar
  45. 4.38
    S. Veprek, Z. Iqbal, H. R. Oswald, F. A. Sarott, J. J. Wagner: J. Physique 42, C 4–256 (1981)Google Scholar
  46. 4.39
    J. Jannopolous, G. Lucovsky (eds.): TAP56Google Scholar
  47. 4.40 a)
    J. C. Knights, R. A. Lujan: Appl. Phys. Lett. 35, 244 (1979)ADSCrossRefGoogle Scholar
  48. 4.40 b)
    S. Oguz, D. K. Paul, J. Blake, R. W. Collins, A. Lachter, B. G. Yacobi, W. Paul: J. Physique 42, C4–679 (1981)Google Scholar
  49. 4.41
    R. C. Ross, I. S. T. Tsang, R. Messier, W. A. Langford, C. Burnam: J. Vac. Sci. Tech. 20, 406 (1982)ADSCrossRefGoogle Scholar
  50. 4.42
    J. A. Reimer: J. Physique 42, C4–715 (1981)Google Scholar
  51. 4.43
    M. E. Lowry, R. G. Barnes, D. R. Torgeson, F. R. Jeffrey: Solid State Commun. 28, 113 (1981)CrossRefGoogle Scholar
  52. 4.44
    T. D. Moustakas, T. Tiedje, W. A. Langford: AIP Conf. Proc. 73, 20 (1981)CrossRefADSGoogle Scholar
  53. 4.45
    P. M. Martin, W. T. Paulewicz: J. Non-Cryst. Solids 45, 15 (1981)ADSCrossRefGoogle Scholar
  54. 4.46
    E. C. Freeman, W. Paul: Phys. Rev. B 18, 4288 (1978)ADSCrossRefGoogle Scholar
  55. 4.47
    M. H. Brodsky: Thin Solid Films 50, 57 (1978)ADSCrossRefGoogle Scholar
  56. 4.48
    T. S. Nashashibi, T. M. Searle, I. G. Austin, K. Richards, M. J. Thompson, J. Allison: J. Non-Cryst. Solids 35–36, 675 (1980)CrossRefGoogle Scholar
  57. 4.49
    P. M. Martin, W. T. Paulewicz: Solar Energy Mat. 2, 143 (1980)ADSCrossRefGoogle Scholar
  58. 4.50
    F. R. Jeffrey, H. R. Shanks, G. C. Danielson: J. Appl. Phys. 50, 7034 (1979)ADSCrossRefGoogle Scholar
  59. 4.51
    A. R. Mirza, A. J. Rhodes, J. Allison, M. J. Thompson: J. Physique 42, C4–659 (1981)Google Scholar
  60. 4.52
    D. P. Turner, I. P. Thomas, J. H. Allison, M. J. Thompson, A. J. Rhodes, I. G. Austin, T. M. Searle: AIP Conf. Proc. 73, 47 (1981)ADSCrossRefGoogle Scholar
  61. 4.53
    T. D. Moustakas: Solar Energy Mat. 8, 187 (1982)ADSCrossRefGoogle Scholar
  62. 4.54
    S. Oguz, D. A. Anderson, W. Paul, H. J. Stein: Phys. Rev. B 22, 880 (1980)ADSCrossRefGoogle Scholar
  63. 4.55
    H. R. Shanks, F. R. Jeffrey, M. E. Lowry: J. Physique 42, C4–773 (1981)Google Scholar
  64. 4.56
    G. A. N. Connell, J. P. Pawlik: Phys. Rev. B 13, 787 (1976)ADSGoogle Scholar
  65. 4.57
    E. C. Freeman, W. Paul: Phys. Rev. B 20, 716 (1979)ADSCrossRefGoogle Scholar
  66. 4.58 a)
    G. D. Cody, T. Tiedje, B. Abeles, B. Brooks, Y. Goldstein: Phys. Rev. Lett. 47, 1480 (1981)ADSCrossRefGoogle Scholar
  67. 4.58 b)
    T. M. Searle, T. S. Nashashibi, I. G. Austin, R. Devonshire, G. Lockwood: Phil. Mag. 39, 389 (1979)Google Scholar
  68. 4.59
    A. J. Rhodes, T. M. Searle, 1. G. Austin, J. Allison: Sheffield Magnetron Sputtered Data, to be publishedGoogle Scholar
  69. 4.60
    W. B. Jackson, N. Amer: Phys. Rev. 25, 5559 (1982)ADSCrossRefGoogle Scholar
  70. 4.61
    W. B. Jackson, M. J. Thompson: Physica B2C 117 & 118, 883 (1983)Google Scholar
  71. 4.62
    I. G. Austin, K. Richards, T. M. Searle, M. J. Thompson, M. M. Alkaisi, I. P. Thomas, J. Allison: Inst. of Phys. Conf. Series No. 43, ed. by B. L. H. Wilson (1978) p. 1155Google Scholar
  72. 4.63
    W. Paul, D. A. Anderson: Solar Energy Mat. 5, 229 (1981)CrossRefGoogle Scholar
  73. 4.64
    P. K. Bhat, G. Diprose, T. M. Searle, I. G. Austin, P. G. LeComber, W. E. Spear: Physica B 2 C 117 & 118, 917 (1983)Google Scholar
  74. 4.65
    P. K. Bhat, A. J. Rhodes, T. M. Searle, I. G. Austin, J. Allison: To be publishedGoogle Scholar
  75. 4.66
    D. A. Anderson, G. Moddel, R. W. Collins, W. Paul: Solid State Commun. 31, 677 (1979)ADSCrossRefGoogle Scholar
  76. 4.67
    R. A. Street, D. K. Biegelsen, J. Stuke: Phil. Mag. B 40, 451 (1979)CrossRefGoogle Scholar
  77. 4.68
    S. Depinna, B. C. Cavenett, I. G. Austin: Phil. Mag. B 46, 473 (1982)CrossRefGoogle Scholar
  78. 4.69
    A. J. Snell, K. D. Mackenzie, P. G. LeComber, W. E. Spear: J. Non-Cryst. Solids 35–36, 593 (1980)CrossRefGoogle Scholar
  79. 4.70
    J. Beichler, W. Fuks, H. Mell, H. M. Welsch: J. Non-Cryst. Solids 35–36, 587 (1980)CrossRefGoogle Scholar
  80. 4.71
    M. Shur, W. Czubatyi, A. Madan: J. Non-Cryst. Solids 35–36, 731 (1980)CrossRefGoogle Scholar
  81. 4.72
    T. Tiedje, C. R. Wronski, J. M. Cebulka: J. Non-Cryst. Solids 35–36, 743 (1980)CrossRefGoogle Scholar
  82. 4.73
    P. Viktorovitch, D. Jousee: J. Non-Cryst. Solids 35–36, 569 (1980)CrossRefGoogle Scholar
  83. 4.74
    H. Fernandez-Canque, J. Allison, M. J. Thompson: J. Appl. Phys. (in press)Google Scholar
  84. 4.75
    P. Viktorovitch: J. Appl. Phys. 52, 1392 (1981)ADSCrossRefGoogle Scholar
  85. 4.76
    T. Tiedje, C. R. Wronski, B. Abeles, J. M. Cebulka: Solar Cells 2, 301 (1980)CrossRefGoogle Scholar
  86. 4.77
    W. E. Spear, P. G. LeComber: J. Non-Cryst. Solids 8–10, 727 (1972)CrossRefGoogle Scholar
  87. 4.78
    M. Powell: Phil. Mag. 43, 93 (1981)Google Scholar
  88. 4.79
    R. Weisfield, D. A. Anderson: Phil. Mag. B 44, 83 (1981)CrossRefGoogle Scholar
  89. 4.80
    N. B. Goodman, H. Fritzsche, H. Azaki: J. Non-Cryst. Solids 35–36, 500 (1980)Google Scholar
  90. 4.81
    N. B. Goodman, H. Fritzsche: Phil. Mag. B 42, 149 (1980)CrossRefGoogle Scholar
  91. 4.82
    R. L. Weisfield, P. Viktorovitch, D. A. Anderson, W. Paul: Appl. Phys. Lett. 39, 263 (1981)ADSCrossRefGoogle Scholar
  92. 4.83a
    P. Bräunlich (ed.): Thermally Stimulated Relaxation in Solids, Topics Appl. Phys., Vol. 37 (Springer, Berlin, Heidelberg, New York 1979) Chap. 3Google Scholar
  93. 4.83b
    J. Bourgain, M. Lannao: Point Defects in Semiconductors II, Springer Ser. Solid-State Sci., Vol. 35 (Springer, Berlin, Heidelberg, New York 1983)Google Scholar
  94. 4.84 a)
    R. S. Crandall: J. Physique 42, C4–413 (1981)Google Scholar
  95. 4.84 b)
    J. D. Cohen, D. V. Lang, J. P. Harbison, A. M. Sergent: J. Physique 42, C4–371 (1981)Google Scholar
  96. 4.85
    Yu. N. Molin, K. M. Salikhov, K. I. Zamaraev: Spin Exchange, Springer Ser. Chem. Phys., Vol. 8 (Springer, Berlin, Heidelberg, New York 1980)Google Scholar
  97. 4.86 a)
    A. J. Lewis Jr., G. A. N. Connell, W. Paul, J. R. Pawlik, R. J. Temkin: AIP Conf. Proc. 20, 27 (1974)ADSGoogle Scholar
  98. 4.86 b)
    J. R. Pawlik, W. Paul: Proc. 7th Intern. Conf. of Amorphous and Liquid Semiconductors, Edinburgh, ed. by W. E. Spear (1977) p. 437Google Scholar
  99. 4.87
    W. Paul, D. A. Anderson: Solar Energy Mat. 5, 229 (1981)CrossRefGoogle Scholar
  100. 4.88
    D. A. Anderson, W. Paul: Phil. Mag. B 44, 187 (1980)Google Scholar
  101. 4.89
    M. H. Tanielian, M. Chatani, H. Fritzsche, V. Smid, P. D. Persons: J. Non-Cryst. Solids 35–36, 575 (1980)CrossRefGoogle Scholar
  102. 4.90
    T. Tiedje, T. D. Moustakas, J. M. Cebulka: J. Physique 42, C4–155 (1981)Google Scholar
  103. 4.91
    T. D. Moustakas, C. R. Wronski, T. Tiedje: Appl. Phys. Lett. 39, 721 (1981)ADSCrossRefGoogle Scholar
  104. 4.92
    M. Suzuki, T. Maekawa, Y. Kakimoto, T. Bardow: J. Physique 42, C4–623 (1981)Google Scholar
  105. 4.93
    M. J. Thompson, J. Allison, M. M. Alkaisi, I. P. Thomas: Rev. Phys. Appl. 13, 625 (1978)Google Scholar
  106. 4.94
    M. M. Alkaisi, M. J. Thompson: Solar Cells 1, 91 (1979/1980)ADSCrossRefGoogle Scholar
  107. 4.95
    M. J. Thompson, M. M. Alkaisi, J. Allison: IEE Proc. 127, 213 (1980)Google Scholar
  108. 4.96
    T. D. Moustakas, C. R. Wronski, D. L. Morel: J. Non-Cryst. Solids 35–36, 719 (1980)CrossRefGoogle Scholar
  109. 4.97
    L. Vieux-Rochaz, A. Chenevas-Paule: Proc. 2nd EC Photovoltaic Solar Energy Conference, Berlin (Reidel, Holland 1979) p. 295Google Scholar
  110. 4.98
    T. D. Moustakas, R. Friedman: Appl. Phys. Lett. 40, 515 (1982)ADSCrossRefGoogle Scholar
  111. 4.99
    W. Paul, A. J. Lewis, G. A. N. Connell, T. D. Moustakas: Solid State Commun. 20, 969 (1976)ADSCrossRefGoogle Scholar
  112. 4.100
    R. A. Street, D. K. Biegelsen, J. C. Knights: Phys. Rev. B 24, 269 (1981)ADSCrossRefGoogle Scholar
  113. 4.101
    T. D. Moustakas, R. Friedman, B. R. Weinberger: Appl. Phys. Lett. 40, 587 (1982)ADSCrossRefGoogle Scholar
  114. 4.102
    M. J. Thompson, M. M. Alkaisi, J. Allison: Proc. 2nd EC Photovoltaic Solar Engergy Conference, Berlin (Reidel, Holland 1979) p. 303Google Scholar
  115. 4.103
    J. Baixeras, D. Moncaraglia, P. Andro: Phil. Mag. B 37, 403 (1978)CrossRefGoogle Scholar
  116. 4.104
    M. Toulemonde, J. J. Grob, J. C. Bruyere, A. Deneuville, H. Hamdi, P. Siffert: J. Physique 42, C4–799 (1981)Google Scholar
  117. 4.105
    D. A. Anderson, W. Paul: Phil. Mag. B 45, 1 (1982)Google Scholar
  118. 4.106
    M. J. Thompson, J. Allison, M. Alkaisi, S. J. Barber: Proc. of Photovoltaic Solar Energy Conference, Luxembourg (Reidel, Holland 1977)Google Scholar
  119. 4.107
    N. van Dong, T. Q. Hai: Phys. Stat. Sol. 88, 555 (1980)Google Scholar
  120. 4.108
    K. Tanaka, S. Yamasaki, K. Nagawa, A. Matsuda, K. Okushi, M. Matsumura, S. Iizima: J. Non-Cryst. Solids 35/36, 183 (1980)CrossRefGoogle Scholar

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  • Malcolm J. Thompson

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