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Fundamental and applied work on glow discharge material

  • Walter E. Spear
  • Peter G. LeComber
Chapter
Part of the Topics in Applied Physics book series (TAP, volume 55)

Keywords

Glow Discharge Field Effect Deep Level Transient Spectroscopy Amorphous Semiconductor Apply Work 
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References

  1. 3.1
    H. F. Sterling, R. C. G. Swann: Solid State Electr. 8, 653–654 (1965)CrossRefADSGoogle Scholar
  2. 3.2
    R. C. Chittick, J. H. Alexander, H. F. Sterling: J. Electrochem. Soc. 116, 77–81 (1969)CrossRefGoogle Scholar
  3. 3.3
    P. G. LeComber, W. E. Spear: Phys. Rev. Lett. 25, 509–511 (1970)ADSCrossRefGoogle Scholar
  4. 3.4
    P. G. LeComber, A. Madan, W. E. Spear: J. Non-Cryst. Solids 11, 219–234 (1972)CrossRefADSGoogle Scholar
  5. 3.5
    J. C. Knights: Phil. Mag. 34, 663–667 (1976)CrossRefADSGoogle Scholar
  6. 3.6
    J. C. Knights, G. Lucovsky, R. J. Nemanich: J. Non-Cryst. Solids 32, 393–403 (1979)CrossRefADSGoogle Scholar
  7. 3.7
    Y. Kuwano, M. Ohnishi: J. Physique 42, C4, 1155–1164 (1981)Google Scholar
  8. 3.8
    B. A. Scott, M. H. Brodsky, D. C. Green, P. B. Kirby, R. M. Plecenik, E. E. Simonyi: Appl. Phys. Lett. 37, 725–727 (1980)ADSCrossRefGoogle Scholar
  9. 3.9
    B. A. Scott, M. H. Brodsky, D. C. Green, R. M. Plecenik, E. E. Simonyi, R. Serino: AIP Conf. Proc. No. 73, pp. 6–9 (1981) (Carefree, Arizona)Google Scholar
  10. 3.10
    D. A. Anderson, W. E. Spear: Phil. Mag. 36, 695–712 (1977)CrossRefADSGoogle Scholar
  11. 3.11
    K. Ogawa, I. Shimizu, E. Inoue: Japan. J. Appl. Phys. 20, L639–L642 (1981)ADSCrossRefGoogle Scholar
  12. 3.12
    R. W. Griffith: Solar Materials Science (Academic, New York 1980) pp. 665–731Google Scholar
  13. 3.13
    A. Matsuda, K. Tanaka: Thin Solid Films 92, 171–187 (1982)CrossRefADSGoogle Scholar
  14. 3.14
    R. W. Griffith, F. J. Kampas, P. E. Vanier, M. D. Hirsch: J. Non-Cryst. Solids 35/36, 391–396 (1980)CrossRefGoogle Scholar
  15. 3.15
    G. Turban, Y. Catherine, B. Grolleau: Thin Solid Film 60, 147–155 (1979)CrossRefADSGoogle Scholar
  16. 3.16
    T. Hamasaki, M. Hirose, Y. Osaka: J. Physique 42, C 4, 807–810 (1981)Google Scholar
  17. 3.17
    A. Matsuda, K. Nakagawa, K. Tanaka, M. Matsumura, S. Yamasaki, H. Okushi, S. Iizima: J. Non-Cryst. Solids 35/36, 183–188 (1980)CrossRefGoogle Scholar
  18. 3.18
    F. J. Kampas, R. W. Griffith: AIP Conf. Proc. No. 73, pp. 1–5 (1981) (Carefree, Arizona)Google Scholar
  19. 3.19
    W. E. Spear, P. G. LeComber: J. Non-Cryst. Solids 8–10, 727–738 (1972)CrossRefGoogle Scholar
  20. 3.20
    A. Madan, P. G. LeComber, W. E. Spear: J. Non-Cryst. Solids 20, 239–257 (1976)CrossRefADSGoogle Scholar
  21. 3.21
    W. E. Spear: In Amorphous and Liquid Semiconductors, ed. by J. Stuke, W. Brenig (Taylor & Francis, London 1974) pp. 1–16Google Scholar
  22. 3.22
    A. Madan, P. G. LeComber: In Amorphous and Liquid Semiconductors, ed. by W. E. Spear (CICL, University of Edinburgh, 1977) pp. 377–381Google Scholar
  23. 3.23
    P. G. LeComber: In Fundamental Physics of Amorphous Semiconductors, ed. by F. Yonezawa, Springer Ser. Solid-State Sci., Vol. 25 (Springer, Berlin, Heidelberg, New York 1981) pp. 46–55Google Scholar
  24. 3.24
    R. Weisfield, P. Viktorovitch, D. A. Anderson, W. Paul: Appl. Phys. Lett. 39, 263–265 (1981)ADSCrossRefGoogle Scholar
  25. 3.25
    N. B. Goodman, H. Fritzsche: Phil. Mag. B42, 149–165 (1980)Google Scholar
  26. 3.26
    M. J. Powell: Phil. Mag. B 43, 93–103 (1981)Google Scholar
  27. 3.27
    M. Grünewald, P. Thomas, D. Würtz: Phys. Stat. Sol. (b) 100, K 139–K 143 (1980)CrossRefADSGoogle Scholar
  28. 3.28
    R. L. Weisfield, D. A. Anderson: Phil. Mag. B44, 83–93 (1981)Google Scholar
  29. 3.29
    M. Grünewald, K. Weber, W. Fuhs, P. Thomas: J. Physique 42, C4, 523–526 (1981)Google Scholar
  30. 3.30
    L. Schweitzer, M. Grünewald, H. Dersch: J. Physique 42, C4, 827–830 (1981)Google Scholar
  31. 3.31
    P. Thomas: private communication (1980)Google Scholar
  32. 3.32
    R. J. Loveland, W. E. Spear, A. Al-Sharbaty: J. Non-Cryst. Solids 13, 55–68 (1973-4)CrossRefADSGoogle Scholar
  33. 3.33
    A. Ghaith: Thesis, University of Dundee (1980) (unpublished)Google Scholar
  34. 3.34
    D. I. Jones, R. A. Gibson, P. G. LeComber, W. E. Spear: Solar Energy Mat. 2, 93–106 (1979)ADSCrossRefGoogle Scholar
  35. 3.35
    M. H. Tanielian, N. B. Goodman, H. Fritzsche: J. Physique 42, C4, 375–378 (1981)Google Scholar
  36. 3.36
    M. J. Powell, B. C. Easton, D. H. Nicholls: J. Physique 42, C4, 379–382 (1981)Google Scholar
  37. 3.37
    D. L. Staebler, C. R. Wronski: J. Appl. Phys. 51, 3262–3268 (1980)ADSCrossRefGoogle Scholar
  38. 3.38
    D. Jousse, R. Basset, S. Delionibus, B. Bowden: Appl. Phys. Lett. 37, 208–211 (1980)ADSCrossRefGoogle Scholar
  39. 3.39
    S. R. Elliott: Phil. Mag. B 39, 349–358 (1979)Google Scholar
  40. 3.40
    I. Solomon: In Fundamental Physics of Amorphous Semiconductors, ed. by F. Yonezawa, Springer Ser. Solid-State Sci., Vol. 25 (Springer, Berlin, Heidelberg, New York 1981) pp. 33–39Google Scholar
  41. 3.41
    H. Fritzsche: Solar Cells 2, 289 (1980)CrossRefGoogle Scholar
  42. 3.42
    W. E. Spear, R. J. Loveland, A. Al-Sharbaty: J. Non-Cryst. Solids 15, 410–422 (1974)CrossRefADSGoogle Scholar
  43. 3.43
    W. E. Spear, P. G. LeComber: Solid State Commun. 17, 1193–1196 (1975)CrossRefADSGoogle Scholar
  44. 3.44
    W. E. Spear, P. G. LeComber: Phil. Mag. 33, 935–949 1976)CrossRefADSGoogle Scholar
  45. 3.45
    G. Müller, S. Kalbitzer, W. E. Spear, P. G. LeComber: In Amorphous and Liquid Semiconductors, ed. by W. E. Spear (CICL, University of Edinburgh, 1977) pp. 442–446Google Scholar
  46. 3.46
    S. Kalbitzer, G. Müller, P. G. LeComber, W. E. Spear: Phil. Mag. B 41, 439–456 (1980)Google Scholar
  47. 3.47
    D. V. Lang: In Thermally Stimulated Relaxation in Solids, ed. by P. Bräunlich, Topics Appl. Phys., Vol. 37 (Springer, Berlin, Heidelberg, New York 1979) chap. 3Google Scholar
  48. 3.48
    J. Bourgain, M. Lannoo: Point Defects in Semiconductors II, Springer Ser. Solid-State Sci., Vol. 35 (Springer, Berlin, Heidelberg, New York 1983)Google Scholar
  49. 3.49 a)
    J. D. Cohen, D. V. Lang, J. C. Bean, J. P. Harbison: Phys. Rev. Lett. 45, 197–200 (1980)ADSCrossRefGoogle Scholar
  50. 3.49 b)
    J. D. Cohen, D. V.Lang, J. C. Bean, J. Harbison: J. Non-Cryst. Solids 35/36, 581–586 (1980)CrossRefGoogle Scholar
  51. 3.49 c)
    D. V. Lang, J. D. Cohen, J. P. Harbison: Phys. Rev. B 25, 5285–5320 (1982)ADSCrossRefGoogle Scholar
  52. 3.50
    W. den Boer: J. Physique 42, C4, 451–454 (1981)Google Scholar
  53. 3.51
    K. D. Mackenzie, P. G. LeComber, W. E. Spear: Phil. Mag. B 46, 377–389 (1982)CrossRefGoogle Scholar
  54. 3.52
    T. P. Brody, J. A. Asars, G. D. Dixon: IEEE Trans. ED-20, 995–1001 (1973)Google Scholar
  55. 3.53
    P. G. LeComber, W. E. Spear, A. Ghaith: Electron Lett. 15, 179–180 (1979)CrossRefGoogle Scholar
  56. 3.54
    P. G. LeComber, A. J. Snell, K. D. Mackenzie, W. E. Spear: J. Physique 42, C 4, 423–432 (1981)Google Scholar
  57. 3.55 a)
    A. J. Snell, K. D. Mackenzie, W. E. Spear, P. G. LeComber, A. J. Hughes: Appl. Phys. 24, 357–362 (1981)ADSCrossRefGoogle Scholar
  58. 3.55 b)
    K. D. Mackenzie, A. J. Snell, I. French, P. G. LeComber, W. E. Spear: Appl. Phys. A 31, 8–92 (1983)CrossRefGoogle Scholar
  59. 3.56
    M. J. Powell, B. C. Easton, O. F. Hill: Appl. Phys. Lett. 38, 794 (1981)ADSCrossRefGoogle Scholar
  60. 3.57 a)
    H. Hayama, M. Matsumura: Appl. Phys. Lett. 36, 754–755 (1980)ADSCrossRefGoogle Scholar
  61. 3.57 b)
    M. Matsumura, S. Kuno, Y. Uchida: J. Phys. (Paris) 42, C4, 519–522 (1981)Google Scholar
  62. 3.57 c)
    Y. Okubo, T. Nakagiri, Y. Osada, M. Sugata, N. Kitihara, K. Hatanaka: SID 82 Digest, 40–4lGoogle Scholar
  63. 3.57 d)
    S. Kawai, N. Takagi, T. Kodama, K. Asama, S. Yongisawa: SID 82 Digest, 42–43Google Scholar
  64. 3.58
    H. C. Tuan, M. J. Thompson, N. M. Johnson, R. A. Lujan: IEEE Trans. EDL (in press) (1983)Google Scholar
  65. 3.59
    I. French, A. J. Snell, P. G. LeComber, J. Stephens: Appl. Phys. A 31, 19–22 (1983)ADSCrossRefGoogle Scholar
  66. 3.60
    M. Matsumura, H. Hayama: Proc. IEEE 68, 1349–1350 (1980)CrossRefGoogle Scholar
  67. 3.61
    M. Matsumura, H. Hayama, Y. Nara, K. Ishibashi: IEEE EDL-1, 182–184 (1980)Google Scholar
  68. 3.62 a)
    A. J. Snell, W. E. Spear, P. G. LeComber, K. D. Mackenzie: Appl. Phys. A26, 83–86 (1981)ADSGoogle Scholar
  69. 3.62 b)
    A. J. Snell, P. G. LeComber, K. D. Mackenzie, W. E. Spear, A. Doghmane: Proc. 10th Intern. Conf. on Amorphous and Liquid Semiconductors, Tokyo 1983. J. Non-Cryst. Solids (in the press)Google Scholar
  70. 3.63
    P. K. Weimer, W. S. Pike, G. Sadasiv, F. V. Shallcross, L. Meray-Hovarth: IEEE Spectrum 6, 52–65 (1969)CrossRefGoogle Scholar
  71. 3.64
    W. E. Spear, P. G. LeComber, S. Kinmond, M. H. Brodsky: Appl. Phys. Lett. 28, 105–107 (1976)ADSCrossRefGoogle Scholar
  72. 3.65
    R. H. Williams, R. R. Varma, W. E. Spear, P. G. LeComber: J. Phys. C 12, L 209–L 213 (1979)ADSGoogle Scholar
  73. 3.66
    W. E. Spear, P. G. LeComber, S. Kalbitzer, G. Müller: Phil. Mag. B 39, 159–165 (1979)Google Scholar
  74. 3.67
    W. Beyer, R. Fischer: Appl. Phys. Lett. 31, 850 (1978)ADSCrossRefGoogle Scholar
  75. 3.68
    W. E. Spear, R. A. Gibson, D. Yang, P. G. LeComber, G. Müller, S. Kalbitzer: J. Physique 42, C4, 1143–1153 (1981)Google Scholar
  76. 3.69
    G. Müller, P. G. LeComber: Phil. Mag. B43, 419–431 (1981)Google Scholar
  77. 3.70
    W. E. Spear, P. G. LeComber, A. J. Snell: Phil. Mag. B 38, 303–317 (1978)Google Scholar
  78. 3.71
    A. J. Snell, K. D. Mackenzie, P. G. LeComber, W. E. Spear: Phil. Mag. B40, 1–15 (1979)Google Scholar
  79. 3.72
    J. Beichler, W. Fuhs, M. Mell, H. M. Welsch: J. Non-Cryst. Solids 35/36, 587–592 (1980)CrossRefGoogle Scholar
  80. 3.73
    A. J. Snell, W. E. Spear, P. G. LeComber: Phil. Mag. B 43, 407–417 (1981)Google Scholar
  81. 3.74
    A. J. Snell, W. E. Spear, P. G. LeComber: J. Phys. Soc. Japan 49, Suppl. A, 1217–1220 (1980)Google Scholar
  82. 3.75
    R. A. Gibson, P. G. LeComber, W. E. Spear: Appl. Phys. 21, 307–311 (1980)ADSCrossRefGoogle Scholar
  83. 3.76
    D. E. Carlson, C. R. Wronski: Appl. Phys. Lett. 29, 602–605 (1976)ADSCrossRefGoogle Scholar
  84. 3.77
    D. L. Staebler: J. Non-Cryst. Solids 35/36, 387–390 (1980)CrossRefADSGoogle Scholar
  85. 3.78
    A. R. Moore: Appl. Phys. Lett. 37, 327–330 (1980)ADSCrossRefGoogle Scholar
  86. 3.79
    J. Dresner, D. J. Szostak, B. Goldstein: AIP Conf. Proc. No. 73, p. 317 (1981) (Carefree, Arizona)Google Scholar
  87. 3.80
    R. Abeles, C. R. Wronski, Y. Goldstein, H. E. Stasiewski, D. Gutkowicz-Krusin, T. Tiedje, G. D. Cody: AIP Conf. Proc. No. 73, pp. 298–30 (1981) (Carefree, Arizona)Google Scholar
  88. 3.81
    K. Hecht: Z. Phys. 77, 235–245 (1932)ADSCrossRefGoogle Scholar
  89. 3.82
    L. Onsager: Phys. Rev. 54, 554–557 (1938)ADSCrossRefGoogle Scholar
  90. 3.83
    D. M. Pai, R. C. Enck: Phys. Rev. B 11, 5163–5174 (1975)ADSGoogle Scholar
  91. 3.84
    R. R. Chance, C. L. Braun: J. Chem. Phys. 59, 2269–2272 (1973)CrossRefADSGoogle Scholar
  92. 3.85
    J. Mort, A. Troup, M. Morgan, S. Grammatica, J. C. Knights, R. Lujan: Appl. Phys. Lett. 38, 277–279 (1981)ADSCrossRefGoogle Scholar
  93. 3.86
    J. Mort, I. Chen, A. Troup, M. Morgan, J. C. Knights, R. Lujan: Phys. Rev. Lett. 45, 1348–1351 (1980)ADSCrossRefGoogle Scholar
  94. 3.87
    J. Mort, S. Grammatica, J. C. Knights, R. Lujan: Solar Cells 2, 451 (1980)CrossRefGoogle Scholar
  95. 3.88
    I. Chen, J. Mort: Appl. Phys. Lett. 37, 952–955 (1981ADSCrossRefGoogle Scholar
  96. 3.89
    M. Silver, A. Madan, D. Adler, W. Czubatyi: Paper presented at the 14th IEEE Photovoltaic Conference, San Diego (1980)Google Scholar
  97. 3.90
    Y. Hamakawa: J. Physique 42, C4, 1131–1142 (1981)Google Scholar
  98. 3.91
    F. Carasco, W. E. Spear: Phil. Mag. B47, 495–507 (1983)Google Scholar
  99. 3.92
    N. Yamamoto, Y. Nakayama, K. Wakita, M. Nakano, T. Kawamura: Japan J. Appl. Phys. Suppl. 20-1, 305 (1981)Google Scholar
  100. 3.93
    N. Yamamoto, K. Wakita, Y. Nakayama, T. Kawamura: J. Physique 42, C4, 495–498 (1981)Google Scholar
  101. 3.94
    I. Shimizu, S. Oda, K. Saito, H. Tomita, E. Inoue: J. Physique 42, C4, 1123–1130 (1981)Google Scholar
  102. 3.95
    ibid.: AIP Conference No. 73, pp. 288–292 (1981) (Carefree, Arizona)Google Scholar
  103. 3.96
    I. Shimizu, T. Komatsu, K. Saito, E. Inoue: J. Non-Cryst. Solids 35/36, 773–778 (1980)CrossRefGoogle Scholar
  104. 3.97
    A. E. Owen, P. G. LeComber, G. Sarrabayrouse, W. E. Spear: IEE Proc. 129, 51–54 (1982)Google Scholar
  105. 3.98
    S. R. Ovshinski: Phys. Rev. Lett. 21, 1450–1453 (1968)ADSCrossRefGoogle Scholar
  106. 3.99
    A. E. Owen, J. M. Robertson: IEEE Trans. ED-20, 105–122 (1973)Google Scholar
  107. 3.100
    H. J. Hovel: Appl. Phys. Lett. 17, 141–143 (1970)CrossRefADSGoogle Scholar
  108. 3.101
    S. Vepřek, V. Maraček: Solid State Electr. 11, 683–684 (1968)CrossRefADSGoogle Scholar
  109. 3.102
    A. P. Webb, S. Vepřek: Chem. Phys. Lett. 62, 173–177 (1979)ADSCrossRefGoogle Scholar
  110. 3.103
    S. Vepřek: Chimia 34, 489–501 (1980)Google Scholar
  111. 3.104
    S. Vepfek, Z. Igbal, H. R. Oswald, A. P. Webb: J. Phys. C 14, 295–308 (1981)ADSCrossRefGoogle Scholar
  112. 3.105
    S. Usui, M. Kikuchi: J. Non-Cryst. Solids 34, 1–11 (1979)CrossRefADSGoogle Scholar
  113. 3.106
    A. Matsuda, S. Yamasaki, K. Nakagawa, H. Okushi, K. Tanaka, S. Iizima, M. Matsumara, H. Yamamoto: Japan J. Appl. Phys. 19, L 305–L 308 (1980)ADSCrossRefGoogle Scholar
  114. 3.107
    T. Hamasaki, H. Kurata, M. Hirose, Y. Osaka: Appl. Phys. Lett. 37, 1084–1086 (1980)ADSCrossRefGoogle Scholar
  115. 3.108
    W. E. Spear, G. Willeke, P. G. LeComber, A. G. Fitzgerald: J. Physique 42, C4, 257–260 (1981)Google Scholar
  116. 3.109
    Z. Igbal, S. Vepřek: J. Phys. C 15, 377–392 (1982)ADSGoogle Scholar
  117. 3.110
    Y. Hishima, T. Hamasaki, H. Kurata, M. Hirose, Y. Osaka: Japan J. Appl. Phys. 20, L 121–L 123 (1981)Google Scholar
  118. 3.111
    A. Matsuda, T. Yoshida, S. Yamasaki, K. Tanaka: Japan J. Appl. Phys. 20, L439–L442 (1981)ADSCrossRefGoogle Scholar
  119. 3.112
    Y. Mishima, S. Miyazaki, M. Hirose, Y. Osaka: Phil. Mag. B46, 1–12 (1982)Google Scholar
  120. 3.113
    J. W. Orton, M. J. Powell: Repts. Progr. Phys. 43, 1263–1307 (1980)ADSCrossRefGoogle Scholar
  121. 3.114
    A. Matsuda, H. Matsumura, S. Yamasaki, H. Yamamoto, T. Imura, H. Okushi, S. Iizima, K. Tanaka: Japan J. Appl. Phys. 20, L 183–L 186 (1981)ADSGoogle Scholar
  122. 3.115
    T. Hamasaki, H. Kurata, M. Hirose, Y. Osaka: Japan J. Appl. Phys. 20, L 84–L 86 (1981)ADSCrossRefGoogle Scholar
  123. 3.116
    A. Madan, S. R. Ovshinsky, E. Benn: Phil. Mag. 40, 259–277 (1979)CrossRefGoogle Scholar
  124. 3.117
    P. G. LeComber, D. I. Jones, W. E. Spear: Phil. Mag. 35, 1173–1187 (1977)CrossRefADSGoogle Scholar
  125. 3.118
    L. Friedman: J. Non-Cryst. Solids 6, 329–341 (1971)CrossRefADSGoogle Scholar
  126. 3.119
    D. Emin: Phil. Mag. 35, 1189–1198 (1977)CrossRefADSGoogle Scholar
  127. 3.120
    O. Reilly, W. E. Spear: Phil. Mag. B38, 295–302 (1978)Google Scholar
  128. 3.121
    G. Willeke, W. E. Spear, D. I. Jones, P. G. LeComber: Phil. Mag. B 46, 177–190 (1982)Google Scholar
  129. 3.122
    G. L. Pearson, J. Bardeen: Phys. Rev. 75, 865–883 (1949)ADSCrossRefGoogle Scholar

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© Springer-Verlag 1984

Authors and Affiliations

  • Walter E. Spear
  • Peter G. LeComber

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