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Semiconductor experiments in megagauss and submegagauss fields

  • Reports by High Magnetic Field Facilities, Technique
  • Conference paper
  • First Online:
Application of High Magnetic Fields in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 177))

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Abstract

This paper reviews the recent progress of the semiconductor research using the high magnetic field facility at ISSP (Institute for Solid State Physics). A variety of experiments have been performed on semiconductors and semimetals under very high magnetic fields up to 280 T (2.8 Megagauss). Among others, we will discuss in the present paper, technical aspects of the pulsed high magnetic fields, far-infrared magneto-optical spectroscopy in Bi and graphite, the Faraday rotation in EuS and EuSe, and quantum transport phenomena in Si MOS-FET and GaAs-AlGaAs heterojunction interfaces.

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Author information

Authors and Affiliations

  1. Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo, Japan

    N. Miura, G. Kido & S. Chikazumi

Authors
  1. N. Miura
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  2. G. Kido
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  3. S. Chikazumi
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Editor information

G. Landwehr

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© 1983 Springer-Verlag

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Miura, N., Kido, G., Chikazumi, S. (1983). Semiconductor experiments in megagauss and submegagauss fields. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_74

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  • DOI: https://doi.org/10.1007/3-540-11996-5_74

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11996-8

  • Online ISBN: 978-3-540-39472-3

  • eBook Packages: Springer Book Archive

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