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Semiconductor experiments in megagauss and submegagauss fields

  • N. Miura
  • G. Kido
  • S. Chikazumi
Reports by High Magnetic Field Facilities, Technique
Part of the Lecture Notes in Physics book series (LNP, volume 177)

Abstract

This paper reviews the recent progress of the semiconductor research using the high magnetic field facility at ISSP (Institute for Solid State Physics). A variety of experiments have been performed on semiconductors and semimetals under very high magnetic fields up to 280 T (2.8 Megagauss). Among others, we will discuss in the present paper, technical aspects of the pulsed high magnetic fields, far-infrared magneto-optical spectroscopy in Bi and graphite, the Faraday rotation in EuS and EuSe, and quantum transport phenomena in Si MOS-FET and GaAs-AlGaAs heterojunction interfaces.

Keywords

Electron Spin Resonance High Magnetic Field Landau Level Plasma Focus Faraday Rotation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • N. Miura
    • 1
  • G. Kido
    • 1
  • S. Chikazumi
    • 1
  1. 1.Institute for Solid State PhysicsUniversity of TokyoTokyoJapan

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