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Temperature dependence of the quantum hall effect in In0.53Ga0.47As-InP heterojunctions

  • J. P. Hirtz
  • Y. Guldner
  • A. Briggs
  • J. P. Vieren
  • P. Voisin
  • M. Voos
  • M. Razeghi
Quantized Hall Effect
Part of the Lecture Notes in Physics book series (LNP, volume 177)

Abstract

We have studied the temperature dependence of the quantum Hall effect in modulation-doped InGaAs-InP heterojunctions from 4.2 K to 50 mK. The results are briefly discussed in terms of electron localisation.

Keywords

Landau Level Quantum Hall Effect Metalorganic Chemical Vapor Deposition Hall Resistance Plateau Width 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • J. P. Hirtz
    • 1
  • Y. Guldner
    • 2
  • A. Briggs
    • 3
  • J. P. Vieren
    • 2
  • P. Voisin
    • 2
  • M. Voos
    • 2
  • M. Razeghi
    • 1
  1. 1.Laboratoire central de recherches, THOMSON-CSFOrsayFrance
  2. 2.Laboratoire associé au CNRS - 24Groupe de Physique des Solides de l'E.N.S.rue LhomondParis
  3. 3.C.R.T.B.T. and S.N.C.I., CNRSGrenoble

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