Abstract
The transverse magnetoresistivity and Hall effect have been investigated in n-InSb heavily doped with sulphur and tellurium. The measurements have been performed under hydrostatic pressures up to 2500 MPa, magnetic fields up to 20 T and in the temperature range from 4.2 K to 120 K.
This is a preview of subscription content, log in via an institution to check access.
Author information
Authors and Affiliations
Editor information
Rights and permissions
Copyright information
© 1983 Springer-Verlag
About this paper
Cite this paper
Konczewicz, L., Litwin-Staszewska, E., Porowski, S., Aulombard, R. (1983). Shubnikov-de Haas effect in heavily doped n-InSb under pressure. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_48
Download citation
DOI: https://doi.org/10.1007/3-540-11996-5_48
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-11996-8
Online ISBN: 978-3-540-39472-3
eBook Packages: Springer Book Archive