Optically pumped recombination radiation in zincblende semiconductors under crossed magnetic and strain fields
Stimulated recombination radiation (SRR) and spin-flip Raman scattering (SFR) has been observed in n-InSb. Uniaxial stress T was applied perpendicular to a magnetic field B (T//  , B//  For this geometry a k·p Hamiltonian was established within an 8×8 Kane model and was diagonalized exactly. Energy levels, transition energies and corresponding oscillator strengths were calculated and compared to the experimental data.
KeywordsConduction Band Valence Band Landau Level Interband Transition Uniaxial Stress
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