Quantum transverse and hall resistivities in silicon MOS inversion layers at temperatures down to 12 mK
Hall and transverse resistivity measurements for Si-nMOS (100) inversion layers have been made at temperatures between 4.2 K and 12 mK and a magnetic field of 120 kOe.The result indicates that the effect of short range scatterers is still dominant at the lowest temperatures. It has been found from a detailed study of transverse resistivity around the mobility gap region that five quantized Hall resistivity plateaus, corresponding to h/ie2 for i =4, 6, 8, 12 and 16, are potentially available for the quantum standard resistor under the magnetic field of 120 kOe at 3He - 4He temperatures.
KeywordsGate Voltage Landau Level Inversion Layer Hall Conductivity Dilution Refrigerator
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