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Quantum transverse and hall resistivities in silicon MOS inversion layers at temperatures down to 12 mK

  • J. Kinoshita
  • K. Inagaki
  • C. Yamanouchi
  • K. Yoshihiro
  • J. Moriyama
  • S. Kawaji
Quantized Hall Effect
Part of the Lecture Notes in Physics book series (LNP, volume 177)

Abstract

Hall and transverse resistivity measurements for Si-nMOS (100) inversion layers have been made at temperatures between 4.2 K and 12 mK and a magnetic field of 120 kOe.The result indicates that the effect of short range scatterers is still dominant at the lowest temperatures. It has been found from a detailed study of transverse resistivity around the mobility gap region that five quantized Hall resistivity plateaus, corresponding to h/ie2 for i =4, 6, 8, 12 and 16, are potentially available for the quantum standard resistor under the magnetic field of 120 kOe at 3He - 4He temperatures.

Keywords

Gate Voltage Landau Level Inversion Layer Hall Conductivity Dilution Refrigerator 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • J. Kinoshita
    • 1
  • K. Inagaki
    • 1
  • C. Yamanouchi
    • 1
  • K. Yoshihiro
    • 1
  • J. Moriyama
    • 2
  • S. Kawaji
    • 2
  1. 1.Electrotechnical LaboratoryIbarakiJapan
  2. 2.Department of PhysicsGakushuin UniversityTokyoJapan

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