Identification of contaminating donors in III–V compounds by far-infrared laser magneto-optical studies
The chemical shifts of the is-2p Zeeman transitions between donor states in n-GaAs and n-InP have been studied in samples from numerous sources. In the best samples of InP eleven separate peaks were observed. The approximate locations of the S and Si components have been established using backdoped samples. The only radically different set of residual donors in InP is produced by bulk growth.
KeywordsLiquid Phase Epitaxy Vapour Phase Epitaxy Strong Component Grown Sample Residual Donor
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