Magneto-optical studies of donor impurities under high pressure

  • S. Wasilewski
  • A. M. Davidson
  • R. A. Stradling
  • S. Porowski
Magneto-Optics in 3D-Systems, Except InSb
Part of the Lecture Notes in Physics book series (LNP, volume 177)


Magneto-optical studies are presented of the shallow donor states and cyclotron resonance of free carriers in n-InSb at hydrostatic pressures of up to 15 kbar. The deepest of the shallow donors shows an interaction with L-associated resonance states in the conduction band. The admixture of L-states permits intervalley coupling by a single TA-(L) phonon of energy of 35 cm−1. Resonant metastable states of predominantly X-character also exist and, when these are occupied, the L- and Λ-like transitions involving the same donor disappear. Preliminary results for the donors in GaAs suggest that similar anticrossing effects occur between the deepest of the shallow donors and resonant states in the conduction band. Both the cyclotron resonance and impurity lines in InSb show a dramatic narrowing which can amount to almost an order of magnitude on increasing the pressure above 5 kbar and central cell structure can be observed on all three of the 1s-2p transitions observed in a magnetic field.


Magnetic Field Conduction Band Cyclotron Resonance Shallow Donor Transport Measurement 
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  1. 1.
    E Litwin-Staszewska, S Porowski, A S Filipchenko Phys.Stat.Solidi b48 525 (1971)Google Scholar
  2. 2.
    M Konczykowski, S Porowski and J Chroboczek Proc.llth Int.Conf. on Phs.Semicond. Warsaw) p1050 1972)Google Scholar
  3. 3.
    E Litwin-Staszewska, A Jedrzejczak, S Porowski and A S Filipchenko Proc.11th Int.Conf.on Phys.Semicond.(Warsaw) p952 (1972).Google Scholar
  4. 4.
    L Konczewicz, E Litwin-Staszewska and S Porowski Proc.3rd Int.Conf. on Narrow Gap Semiconductors (Warsaw) p21l (1977).Google Scholar
  5. 5.
    S Porowski, L Konczewicz, M Konczykowski, R Aulombard and J L Robert Proc.llth Int.Conf. on Phys.of Semicond.(Kyoto) p271 (1980).Google Scholar
  6. 6.
    L Dmowski, M Konczewicz, R Piotrzkowski and S Porowski Phys. Stat. Solidi b73 1131 (1976).Google Scholar
  7. 7.
    M Altarelli and G Iadonisi Il Nuovo Cimento 5 21 (1971).Google Scholar
  8. 8.
    S Porowski Proc.4th Int.Conf. on Narrow Gap Semicond.(Linz) p420 (1981).Google Scholar
  9. 9.
    A M Davidson, P Knowles, P Makado, R A Stradling, S Porowski and Z Wasilewski Solid State Sciences 24 84 (Springer-Verlag 1981).Google Scholar
  10. 10.
    Z Wasilewski, A M Davidson, P Knowles, S Porowski and R A Stradling Proc. 4th Int.Conf. on Narrow Gap Semicond. 183 (1981).Google Scholar
  11. 11.
    B D McCombe, R Kaplan, R J Wagner, E Gornik and W Muller Phys.Rev.B13 2536 (1976).Google Scholar
  12. 12.
    J Golka, J Trylski, M S Skolnick, R A Stradling and Y Couder Solid State Comm. 22 623 (1977).CrossRefGoogle Scholar
  13. 13.
    R Kaplan, R A Cooke and R A Stradling Solid State Chem. Solids 1 137 (1956).Google Scholar
  14. 14.
    PI Trzeciakowski and J Krupski to be published.Google Scholar
  15. 15.
    D L Price, J M Rowe and R M Nicklo Phys.Rev. B3 1268 (1971).Google Scholar
  16. 16.
    R A Stradling and R A Wood J.Phys.C3 2425 (1970).Google Scholar
  17. 17.
    G D Pitt and J Lees Phys Rev B2 4144 (1970).Google Scholar

Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • S. Wasilewski
    • 1
  • A. M. Davidson
    • 1
  • R. A. Stradling
    • 1
  • S. Porowski
    • 2
  1. 1.Physics DepartmentUniversity of St AndrewsPoland
  2. 2.High Pressure CentreUNIPRESS, Polish Academy of SciencesWarsawPoland

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