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Anomalous cyclotron resonance of 2D electrons in AlxGa1−xAs/GaAs heterojunctions

  • S. Narita
  • K. Muro
  • S. Mori
  • S. Hiyamizu
  • K. Nanbu
Magneto-Optics and Electronic Structure of 2D-Systems
Part of the Lecture Notes in Physics book series (LNP, volume 177)

Abstract

Far-infrared cyclotron resonance of a two-dimensional electron gas in A1xGa1-xAs/GaAs heterjunction interfaces has been studied at various electron densities achieved by changing the gate voltage. In the quantum limit, an anomalous shift of mass and line-width change has been observed at low electron densities and low temperatures. The data are discussed in conjunction with previous Si-MOS results in the framework of existing theories.

Keywords

Gate Voltage Cyclotron Resonance Landau Level Charge Density Wave Cyclotron Mass 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • S. Narita
    • 1
  • K. Muro
    • 1
  • S. Mori
    • 1
  • S. Hiyamizu
    • 2
  • K. Nanbu
    • 2
  1. 1.Department of Material Physics, Faculty of Engineering ScienceOsaka UniversityToyonaka, OsakaJapan
  2. 2.Fujitsu Laboratories Ltd.KawasakiJapan

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