Anomalous cyclotron resonance of 2D electrons in AlxGa1−xAs/GaAs heterojunctions
Far-infrared cyclotron resonance of a two-dimensional electron gas in A1xGa1-xAs/GaAs heterjunction interfaces has been studied at various electron densities achieved by changing the gate voltage. In the quantum limit, an anomalous shift of mass and line-width change has been observed at low electron densities and low temperatures. The data are discussed in conjunction with previous Si-MOS results in the framework of existing theories.
KeywordsGate Voltage Cyclotron Resonance Landau Level Charge Density Wave Cyclotron Mass
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