Electronic structure of semiconductor superlattices
A new method for the calculation of the electronic structure of semiconductor superlattices in the envelope-function approximation is presented. The method is particularly suited to a description of type-II superlattices (e.g. InAs - GaSb). The band-edges of the constituent materials are realistically described, and appropriate boundary conditions are derived from the envelope functions. To determine the energy levels, a variational principle is obtained, which automatically produces correctly matched solutions and reduces the numerical work to a standard matrix diagonalization. Results are presented for InAs-GaSb superlattices. They reveal novel aspects of the band-crossing transition which occurs with increasing superlattice period and which produces a zero-gap or very-narrow-gap semiconductor state, rather than a true semimetal.
KeywordsEnvelope Function Band Parameter Semiconductor Superlattices Ordinary Quantum Mechanic Conduction Subband
Unable to display preview. Download preview PDF.
- 1.See e.g. L.L. Chang, J.Phys.Soc.Japan 49, Suppl.A, 997 (1980); P. Voisin et al, ib. 1005 (1980)Google Scholar
- 11.E.O. Kane, in “Semiconductors and Semimetals”, R.K. Willardson and A.C. Beer, eds., (Adademic, New York, 1966) Vol.1, p. 75Google Scholar
- 14.K. Suzuki and N. Miura, J. Phys. Soc. Japan 39, 148 (1975)Google Scholar
- 16.See e.g. M. Altarelli and F. Bassani, in “Handbook of Semiconductors”,Vol. 1, W. Paul ed., (North-Holland, Amsterdam, 1982) p. 269 and references thereinGoogle Scholar
- 18.T. Loucks, “The Augmented Plane Wave Method”, (Benjamin, New York, 1967)Google Scholar