Advertisement

Magneto-optical experiments on a thin InAs LAyer confined between GaSb in a parallel and perpendicular magnetic field

  • J. C. Maan
Magneto-Optics and Electronic Structure of 2D-Systems
Part of the Lecture Notes in Physics book series (LNP, volume 177)

Abstract

Far infrared magneto-optical experiments on a sample consisting of a thin (1000 Å) InAs layer confined between GaSb show for the magnetic field perpendicular to the plane of the layers transitions between hole subbands localized in the GaSb and electron subbands localized in the InAs. This localization is induced by potentials wells created at the interface through the band bending due to the transfer of electrons from the GaSb to the InAs. In addition a double cyclotron resonance of the electrons and a single for the holes is observed. These observations are explained with a simple model for the subband structure at the InAs-GaSb interface. A magnetic field parallel to the interface leads to a change in the subband structure and hybrid electric and magnetic subbands are formed. Transitions between these subbands are observed experimentally and explained theoretically. In this context the influence of a parallel magnetic field on the subband structure in two dimensional systems in general is discussed.

Keywords

Magnetic Field Cyclotron Resonance High Magnetic Field Landau Level Magnetic Field Dependence 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    L.L. Chang, N.J. Kawai, E.E. Mendez, C.A. Chang, L. Esaki, Appl. Phys. Lett. 38, 30, (1981)CrossRefGoogle Scholar
  2. 2.
    Y. Guldner, J.P. Vieren, P. Voisin, M. Voos, J.C. Maan, L.L. Chang, L. Esaki, Solid State Commun. 41, 755, (1982)CrossRefGoogle Scholar
  3. 3.
    A. Daerr, J.P. Kotthaus, J.F. Koch, Solid State Commun. 17, 455 (1975)CrossRefGoogle Scholar
  4. 4.
    G.A. Antcliffe, R.T. Bate, R.A. Reynolds, Proc. Conf. On the Physics of Semimetals and Narrow Gap Semiconductors, Dallas 1970, Ed. D.L. Carter and R.T. Bate, p. 499, Pergamon, New York (1971)Google Scholar
  5. 5.
    E. Bangert, K. von Klitzing, G. Landwehr, Proc. 12th Int. Conf. on the Physics of Semiconductors, Stuttgart, 1974, ed. B.G. Teubner, Stuttgart (1974)Google Scholar
  6. 6.
    G.H. Dohler, Surface Sci. 98, 108, (1980)CrossRefGoogle Scholar
  7. 7.
    M. Alterelli, this conferenceGoogle Scholar
  8. 8.
    F. Koch in ‘Physics in high magnetic fields', Solid State Sciences 24, ed. S. Chikazumi, N. Miura, Springer, Berlin, (1981)Google Scholar
  9. 9.
    F. Stern, W.E. Howard, Phys. Rev. 163, 816, (1967)CrossRefGoogle Scholar
  10. 10.
    W. Beinvogl, A. Kamgan, J.F. Koch, Phys. Rev. B14, 1610, (1976)Google Scholar
  11. 11.
    W. Beinvogl, J.F. Koch, Phys. Rev. Lett. 40, 1736, (1978)CrossRefGoogle Scholar
  12. 12.
    H. Schaber, R.E. Doezema, Phys. Rev. B20, 5257, (1979)Google Scholar
  13. 13.
    R.E. Doezema, M. Nealon, S. Whitmore, Phys. Rev. Lett. 45, 1593, (1980)CrossRefGoogle Scholar
  14. 14.
    M. Nealon, S. Whitmore, R.R. Bourassa, R.E. Doezema, Surface Sci. 113, 282, (1982).CrossRefGoogle Scholar
  15. 15.
    J.C. Maan, Ch. Uihlein, L.L. Chang, L. Esaki, Solid State Commun., to be publishedGoogle Scholar
  16. 16.
    T. Ando, J. Phys. Soc. Japn. 39, 411, (1975)Google Scholar
  17. 17.
    M. Wanner, R.E. Doezema, U. Strom, Phys. Rev. B12, 2883, (1975)Google Scholar
  18. 18.
    R.E. Prange, T.W. Nee, Phys. Rev. 168, 779, (1968)CrossRefGoogle Scholar
  19. 19.
    L.L. Chang, E.E. Mendez, N.J. Kawai, L. Esaki, Surface Sci. 113, 306, (1982)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • J. C. Maan
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungGrenoble CédexFrance

Personalised recommendations