Magnetoconductivity and cyclotron resonance studies on Na+-contaminated Si-SiO2-interfaces
Na+-ions at the Si-SiO2-interface are a readily controlled impurity. We investigate the electronic properties of these Na+-states using the techniques and methods of electron subband studies in a magnetic field. Data on the influence of interface Na+ on the cyclotron mass mc* and the electron scattering rate are presented. The strong ddmping of the resonance at Na+-concentration below 1011cm−2 is correlated with negative magnetoresistance and unusually strong scattering in the dc-magnetoconductivity. We suggest that the effects are caused by a Na+-induced defect complex. For Na+-concentration above 1011cm−2 the scattering rate measured here confirms that derived from transport studies in the absence of a magnetic field.
KeywordsCyclotron Resonance Oxide Charge Negative Magnetoresistance Cyclotron Mass Capacitor Sample
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