Magnetoresistance in a two-dimensional impurity band

  • A. Hartstein
  • A. B. Fowler
  • K. C. Woo
Magneto-Transport in 2D- and Intercalated Systems
Part of the Lecture Notes in Physics book series (LNP, volume 177)


The effect of a magnetic field perpendicular to the surface on the conductance of the two-dimensional (2D) Na+ induced impurity band in silicon inversion layers has been studied. The temperature dependence of the conductance at low fields (H < 5T) σ = σo′exp-(To′/T)1/13, which is expected for variable range hopping in 2-D when the impurity wave functions are hydrogenic. At higher fields (H > 10T), σ = σoexp-(To/T)1/12, which should result for Landau (Gaussian) impurity wave functions. In this high field regime we observe To = aH, where a depends only on the density of states at the Fermi level and fundamental constants. The density of states derived in this way is about an order of magnitude larger than the density of states inferred from earlier measurements and is even approaching the magnitude of the free electron density of states.


Magnetic Field High Magnetic Field Magnetic Field Dependence Impurity Band Negative Magnetoresistance 
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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • A. Hartstein
    • 1
  • A. B. Fowler
    • 1
  • K. C. Woo
    • 2
  1. 1.IBM Thomas J. Watson Research CenterYorktown HeightsUSA
  2. 2.Department of PhysicsBrown University ProvidenceRhode IslandUSA

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