Bias voltage dependence of the temperature of hot n-Si inversion layer electrons in high magnetic fields
The bias voltage (UB−) dependence of the hot electron temperature TC in quantized (100) n-Si inversion layers is calculated from the power balance equation. It is shown that the experimental observed increase of Tc /1,2,3/ in the low UB range O ≤ -UB ≤ 4V can be interpreted in terms of two dimensional (2D) acoustic phonon scattering and the UB dependence of the effective electron mass. The decrease of TC in the high UB range -UB > 4V is due to the enhanced surface roughness and surfon scattering.
KeywordsBias Voltage Inversion Layer Effective Electron Mass Inversion Channel Negative Bias Voltage
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