Bias voltage dependence of the temperature of hot n-Si inversion layer electrons in high magnetic fields

Magneto-Transport in 2D- and Intercalated Systems
Part of the Lecture Notes in Physics book series (LNP, volume 177)


The bias voltage (UB) dependence of the hot electron temperature TC in quantized (100) n-Si inversion layers is calculated from the power balance equation. It is shown that the experimental observed increase of Tc /1,2,3/ in the low UB range O ≤ -UB ≤ 4V can be interpreted in terms of two dimensional (2D) acoustic phonon scattering and the UB dependence of the effective electron mass. The decrease of TC in the high UB range -UB > 4V is due to the enhanced surface roughness and surfon scattering.


Bias Voltage Inversion Layer Effective Electron Mass Inversion Channel Negative Bias Voltage 
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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • E. Vass
    • 1
  1. 1.Institut für ExperimentalphysikUniversity of InnsbruckAustria

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