Electron-electron interaction effects in p-type germanium inversion layers

  • S. Uchida
  • G. Landwehr
Localization in 2D Systems
Part of the Lecture Notes in Physics book series (LNP, volume 177)


The galvanomagnetic properties of p-type inversion layers in germanium bicrystals were studied at helium temperatures T in high magnetic fields B up to 20 Tesla. A logarithmic correction of conductivity and Hall-coefficient together with a positive magneto-resistance ∞ In B in the parallel and transverse configuration suggests the existence of electron-electron interaction effects. The scaling of the magneto-resistance with B/T can be explained with Zeeman splitting of the energy levels.


Tilt Angle Inversion Layer Transverse Magnetic Field Zeeman Splitting Parallel Magnetic Field 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    E.Abrahams, P.W. Anderson, D.C. Licciardello and T.V. Ramakrishnan, Phys.Rev. Lett. 42, 672 (1979)CrossRefGoogle Scholar
  2. [2]
    B.L. Altshuler, A.G. Aronov and P.A. Lee, Phys.Rev.Lett. 44, 1288 (1980)CrossRefGoogle Scholar
  3. [3]
    For a recent review see, e.g., H. Fukuyama, in: Electronic Properties of Two-Dimensional Systems, Surface Science 113, Special Issue, F. Stern Ed. 1982, p. 489; and M.J. Uren, R.A. Davies, M. Kaveh and M. Pepper, J.Phys. C Solid State Phys. 14, 5737 (1981)Google Scholar
  4. [4]
    S. Hikami, A.I. Larkin and Y. Nagaoka, Progr. Theor. Phys. 63, 707 (1980)Google Scholar
  5. [5]
    A. Kawabata, Surface Science 113, 355 (1982)CrossRefGoogle Scholar
  6. [6]
    H. Fukuyama, J. Phys. Soc. Japan 50, 3562 (1981)Google Scholar
  7. [7]
    P.A. Lee and T.V. Ramakrishnan, Phys. Rev. B 26, 4009 (1982)CrossRefGoogle Scholar
  8. [8]
    Y. Kawaguchi and S. Kawaji, J. Phys. Soc.Japan 48, 699 (1980)Google Scholar
  9. [9]
    R.C. Dynes, Surface Science 113, 510 (1982)CrossRefGoogle Scholar
  10. [10]
    R.A. Davies, M.J. Uren and M. Pepper, J. Phys. C 14, L531 (1981)Google Scholar
  11. [11]
    G. Landwehr and P. Handler, J. Phys. Chem. Solids 23, 891 (1962)CrossRefGoogle Scholar
  12. [12]
    B.M. Vul and E.I. Zavaritskaya, Phys. of Semiconductors, 1978, Conf. Ser. 43, Inst. Phys. London, 1978, p. 421Google Scholar
  13. [13]
    S. Uchida and G. Landwehr, to be publishedGoogle Scholar
  14. [14]
    H. Fukuyama, J. Phys. Soc. Japan 48, 2169 (1980)Google Scholar
  15. [15]
    E. Bangert, to be publishedGoogle Scholar
  16. [16]
    H. Fukuyama, private communicationGoogle Scholar
  17. [17]
    R.N.Bhatt and T.V.Ramakrishnan, Physica 109 & 110E 2078 (1982).Google Scholar

Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • S. Uchida
    • 1
  • G. Landwehr
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungGrenoble CédexFrance

Personalised recommendations