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Analysis of Si/SiO2 interface defects by the method of term spectroscopy

  • H. Flietner
Part IV. Defects in Compound Semiconductors
Part of the Lecture Notes in Physics book series (LNP, volume 175)

Keywords

Atomic Configuration Dangling Bond Interface Defect Technological Behaviour Extrinsic Defect 
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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • H. Flietner
    • 1
  1. 1.Zentralinstitut für Elektronenphysik der AdW der DDRBerlinGDR

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