Radiation defects of the semiconductor-insulator interface

  • V. G. Litovchenko
Part IV. Defects in Compound Semiconductors
Part of the Lecture Notes in Physics book series (LNP, volume 175)


Analysing the radiation effects in various I-S and MIS structures three characteristic regions can be distinguished in the general case: a) the insulator layer adjacent to the interface; b) the corresponding interface; c) a thin layer of the semiconductor, adjacent to the interface. Main mechanisms which determine formation of radiation induced defects are: 1) diffusion and drift motion of point (primary) defects and high mobility contaminations from the bulk with subsequent complexing (or accumulation) near or at the interface, predominantly on the more damaged part of it,and 2) electron stimulated photo-chemical reaction causing formation of centers.


Dislocation Loop Defect Formation High Temperature Oxidation Thermal Grown Oxide Surface State Density 
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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • V. G. Litovchenko
    • 1
  1. 1.Institute of SemiconductorsKievUSSR

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