Defect reactions in gap caused by zinc diffusion

  • P. Krispin
  • J. Maege
Part IV. Defects in Compound Semiconductors
Part of the Lecture Notes in Physics book series (LNP, volume 175)


Shallow diffusions of zinc in GaP epitaxial layers were carried out varying the positions on the Ga-P-Zn phase diagram. Under special diffusion conditions zinc profiles were obtained as predicted by the subsitutional-interstitial theory in which the gallium vacancy equilibrium at the diffusion front is maintained. Otherwise, a tail was found in zinc profiles at concentrations below 5·1016 cm−3 not reported till now in GaP epitaxial layers. It is demonstrated that the degradation behaviour of green-emitting diodes is determined by the occurence of zinc diffusion tails in the active zone.


Donor Concentration Defect Reaction Electroluminescence Spectrum Diffusion Front Zinc Diffusion 
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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • P. Krispin
    • 1
  • J. Maege
    • 1
  1. 1.Central Institute of Electron Physics of the Academy of Sciences of the GDRBerlinGermany

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