Advertisement

Main electron traps in gaas: Aggregates of antisite defects

  • T. Wosiński
  • A. Morawski
  • T. Figielski
Part IV. Defects in Compound Semiconductors
Part of the Lecture Notes in Physics book series (LNP, volume 175)

Keywords

Paramagnetic Center Oxygen Impurity Valence Band Edge Antisite Defect GaAs Crystal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    A.M. Huber, N.T. Linh, M. Valladon, L.J. Debrun, G.M. Martin, A. Mtonneau, A. Mircea, J. Appl. Phys. 50, 4022 (1979)Google Scholar
  2. 2.
    J. Lagowski, H.C. Gatos, J.M. Parsey, K. Wada, M. Kamifiska, W. Walukiewicz, Appl. Phys. Lett. 40, 342 (1982)Google Scholar
  3. 3.
    E.R. Weber, H. Ennen, U. Kaufmann, J. Windschief, J. Schneider, T. Wosiński, Appl. Phys. Lett. (in press)Google Scholar
  4. 4.
    T. Wosifiski, A. Morawski, T. Figielski, Appl. Phys. (in press)Google Scholar
  5. 5.
    R.J. Wagner, J.J. Krebs, G.H. Stauss, A.H. White, Solid State Commun. 36, 15 (1980)Google Scholar
  6. 6.
    T. Wosiński, phys. stat. sol. (a) 60, K149 (1980)Google Scholar
  7. 7.
    T. Wosifiski, Crystal Research and Technology 16, 217 (1981)Google Scholar
  8. 8.
    G. Ferenczi, I. Dózsa, Crystal Research and Technology 16, 203 (1981)Google Scholar
  9. 9.
    T. Figielski, Appl. Phys. (in press)Google Scholar

Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • T. Wosiński
    • 1
  • A. Morawski
    • 1
  • T. Figielski
    • 1
  1. 1.Institute of PhysicsPolish Academy of SciencesWarszawaPoland

Personalised recommendations