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Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs

  • M. Kamińska
  • J. Lagowski
  • J. M. Parsey
  • H. C. Gatos
Part IV. Defects in Compound Semiconductors
Part of the Lecture Notes in Physics book series (LNP, volume 175)

Abstract

Large amplitude current oscillations with a thermally activated frequency and thermally — stimulated current oscillations were observed in semi-insulating GaAs for the first time. These oscillations were found at DC electric fields above 500 Vcm−1, about one order of magnitude below the electric-field threshold for Gunn oscillations. The activation energy of the oscillation frequency was found to be 0.8 eV corresponding to the dominant electron trap energy in semi-insulating GaAs (the so-called EL2 level recently attributed to the antisite arsenic [1]). A model proposed to explain the phenomena of voltage — controlled negative resistance in semi-insulating GaAs exposes the role of EL2 defect in the trapping process. The capture of electrons from the conduction band by the EL2 defect has a configurational barrier of approximately 70 meV. The presence of an electric field enhances this electron capture process which makes possible the migration of slow domains.

Keywords

Current Oscillation Negative Resistance ANTISITE Defect Thermally Stimulate Current Trapping Process 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • M. Kamińska
    • 1
  • J. Lagowski
    • 1
  • J. M. Parsey
    • 1
  • H. C. Gatos
    • 1
  1. 1.Massachusetts Institute of TechnologyCambridge , Mass.USA

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