Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c

  • F. Spiegelberg
  • D. Wruck
  • P. Gaworzewski
  • K. Schmalz
Part III. Defects in Silicon
Part of the Lecture Notes in Physics book series (LNP, volume 175)


Heat Treatment Donor Concentration Oxygen Donor Thermal Donor Substitutional Carbon 
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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • F. Spiegelberg
    • 1
  • D. Wruck
    • 1
  • P. Gaworzewski
    • 2
  • K. Schmalz
    • 2
  1. 1.Central Institute of Electron PhysicsAcademy of Sciences of GDRGermany
  2. 2.Institute of Physics of Materials ProcessingGermany

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