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Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon

  • H. Bender
  • J. Van Landuyt
  • S. Amelinckx
  • C. Claeys
  • G. Declerck
  • R. Van Overstraeten
Part III. Defects in Silicon
Part of the Lecture Notes in Physics book series (LNP, volume 175)

Abstract

It is demonstrated that stacking faults can nucleate and grow during the inert annealing of high interstitial oxygen containing silicon wafers. The defect density decrease can be explained by a transition model of Frank type SF's towards 1/6<114>-type SF's and further to perfect loops.

Keywords

Partial Dislocation Interstitial Oxygen Diffraction Vector Increase Anneal Time Denude Zone 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • H. Bender
    • 1
  • J. Van Landuyt
    • 1
  • S. Amelinckx
    • 1
  • C. Claeys
    • 2
  • G. Declerck
    • 2
  • R. Van Overstraeten
    • 2
  1. 1.Universiteit Antwerpen, R.U.C.A.AntwerpenBelgium
  2. 2.K.U. Leuven, E.S.A.T.HeverleeBelgium

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