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Photoluminescence of defect complexes in silicon

  • R. Sauer
  • J. Weber
Part III. Defects in Silicon
Part of the Lecture Notes in Physics book series (LNP, volume 175)

Abstract

This article is concerned with three originally different species of defects in silicon which have only recently been recognized to be accessible to the photoluminescence (PL) technique: (i) Defects incorporating transition metal ions, (ii) defects related with oxygen and carbon doping the silicon and (iii) dislocation induced defects. We shall briefly discuss the state of the art from the PL point of view as well as present new data for all three kinds of defect complexes.

Keywords

Optical Center Diffusion Temperature Local Vibrational Mode Straight Dislocation Exciton Ground State 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • R. Sauer
    • 1
  • J. Weber
    • 1
  1. 1.Physikalisches Institut (Teil 4)Universität StuttgartStuttgart 80Germany

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