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Photodetectors

  • D. P. Schinke
  • R. G. Smith
  • A. R. Hartman
Chapter
Part of the Topics in Applied Physics book series (TAP, volume 39)

Keywords

Dark Current Depletion Region Avalanche Photodiode Guard Ring Ionization Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

List of Symbols

A

Diode area

B

Effective bandwidth of the receiver

C

Diode capacitance

d

Diode diameter

d1

Thickness of front contact

Eg

Bandgap energy [eV]

F(M)

Excess noise factor

h

Planck's constant

ID

Photodiode dark current

Idb

Component of the detector dark current which is to be multiplied

Ids

Component of the detector dark current which is not multiplied

Io

Primary current in diode (in avalanche region)

Isig

The primary signal photocurrent

keff

Effective ratio of the ionization coefficients a/β

M

Avalanche multiplication value (Mo is the dc value)

q

Electron charge

R

Responsivity, also load resistance

r1

Reflectivity of surface

t

Response time

tav

Average carrier transit time

Vbr

Reverse breakdown voltage

W

Width of the junction depletion region

α

Absorption coefficient [cm−1]; 1.c. electron ionization coefficient

β

Hole ionization coefficient

η

Quantum efficiency

ϱ

Resistivity of the drift region in diode

τ

Transit time (with subscript for appropriate diode region)

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Copyright information

© Springer-Verlag 1980

Authors and Affiliations

  • D. P. Schinke
  • R. G. Smith
  • A. R. Hartman

There are no affiliations available

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