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Structure defects in Pb 1-xSnxTe solid solution heterocompositions

  • E. P. Bochkarev
  • V. M. Lakeenkov
  • M. I. Nikolaev
  • O. V. Pelevin
2. Crystal growth and new materials
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

Regularities of defect formation in PbTe-Pb 1-xSnxTe, BaF2Pb1−xSnxTe (0 ≤ x ≤ 0,25) epitaxial heterostructures have been investigated by optical microscopy and X-ray diffractometry techniques. We have analysed influence of lattice period values mismatch and thermal expansion coefficients difference for the materials, contiquous at the heterojunctions, on defect formation in the epitaxial layers. Some possible ways to decrease structure defects in Pb1−xSnxTe layers are being discussed.

Keywords

Dislocation Density Crystal Lattice Period Layer Dislocation Substrate Temperature Dependence Thermal Expansion Coefficient Difference 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • E. P. Bochkarev
    • 1
  • V. M. Lakeenkov
    • 1
  • M. I. Nikolaev
    • 1
  • O. V. Pelevin
    • 1
  1. 1.Rare Metals Institute “GIREDMENT”MoscowUSSR

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