Binding energies of charged impurity centres in narrow gap materials with large lattice polarizability
The binding of electrons or holes to charged impurity centres in narrow gap materials with large lattice polarizability is investigated theoretically. It is found that the extremely small binding energies from the hydrogen model are only weakly enlarged by taking account of the dynamics of lattice polarization and of effective mass anisotropies. Lattice relaxation, however, results in a strong increase of binding energies by a factor of the order of magnitude (εo/ε∞)
KeywordsLattice Relaxation Free Carrier Concentration Total Binding Energy Free Carrier Density Hydrogen Model
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