Strong coupling between the resonant state and the crystal lattice in n-InSb
The free electron capture cross section, σ, and the emission rate, ∝ , are determined as functions of temperature and hydrostatic pressure for the defect level which is resonant at ambient pressure but becomes bound at high pressures. For the level being resonant as well as bound both σ and ∝ are thermally activated what is proved to originate from strong defect — lattice coupling.
KeywordsConduction Band Emission Rate Inverse Temperature Capture Cross Section Capture Cross
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