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Strong coupling between the resonant state and the crystal lattice in n-InSb

  • Leslaw Dmowski
  • Michal Baj
  • Paulos Ioannades
11. Impurities and Resonant States
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

The free electron capture cross section, σ, and the emission rate, ∝ , are determined as functions of temperature and hydrostatic pressure for the defect level which is resonant at ambient pressure but becomes bound at high pressures. For the level being resonant as well as bound both σ and ∝ are thermally activated what is proved to originate from strong defect — lattice coupling.

Keywords

Conduction Band Emission Rate Inverse Temperature Capture Cross Section Capture Cross 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • Leslaw Dmowski
    • 1
  • Michal Baj
    • 2
  • Paulos Ioannades
    • 3
  1. 1.High Pressure Research Center “Unipress”WarsawPoland
  2. 2.Institute of Experimental PhysicsWarsaw UniversityWarsawPoland
  3. 3.Physics Laboratory IUniversity of PatrasGreece

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