Abstract
The free electron capture cross section, σ, and the emission rate, ∝ , are determined as functions of temperature and hydrostatic pressure for the defect level which is resonant at ambient pressure but becomes bound at high pressures. For the level being resonant as well as bound both σ and ∝ are thermally activated what is proved to originate from strong defect — lattice coupling.
This is a preview of subscription content, log in via an institution to check access.
Preview
Unable to display preview. Download preview PDF.
References
M. Końiczykowski, S.Porowski, and J.Chroboczek: Proc. XI Internat. Conf. Phys. Semicond. Warsaw 1972, Vol. 2 p.1050.
L.Dmowski, M. Kończykowski, R. Piotrzkowski, and S. Porowski: phys. stat. sol. /b/ 73 /1976/K131.
S.Porowski, M. Kończykowski, and J.Chroboczek: phys. stat. sol. /b/ 63 /1974/ 291.
D.L.Losee, R.P.Khosla, D.K.Ranadive, and F.T.J.Smith: Solid State Commun. 13 /1973/ 819.
J.M.Langer, U.Ogonowska, and A.Iller: Inst. Phys. Conf. Ser. No 43 /1979/ 277.
C.H. Henry and D.V.Lang: Phys. Rev. B15 /1977/ 989.
J.M.Langer: Proc. XV Internat. Conf. Phys. Semicond. Kyoto 1980, Journal Phys. Soc. Japan 49 Sup.A /1980/ 207.
Author information
Authors and Affiliations
Editor information
Rights and permissions
Copyright information
© 1982 Springer-Verlag
About this paper
Cite this paper
Dmowski, L., Baj, M., Ioannades, P. (1982). Strong coupling between the resonant state and the crystal lattice in n-InSb. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_82
Download citation
DOI: https://doi.org/10.1007/3-540-11191-3_82
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-11191-7
Online ISBN: 978-3-540-38978-1
eBook Packages: Springer Book Archive