Localized “deep” defect states in PbSexTe1−x mixed crystals

  • G. Brunthaler
  • K. Lischka
  • L. Palmetshofer
11. Impurities and Resonant States
Part of the Lecture Notes in Physics book series (LNP, volume 152)


Localized defect states were observed in as grown and in ion-implantation damaged samples of PbSexTe1−x (o≦x≦1), mixed crystals. The position of these levels relative to the conduction band was determined from Hall-data and was found to be strongly temperature dependent but relatively stable with varying Se content of the solid solutions. A model which is able to explain the observed trends not only in PbSeTe but also in PbSnTe is presented. According with earlier theoretical investigations of defect states in Pb-salts, this model is based on the assumption that the observed localized states are generated by anion vacancies.


Conduction Band Defect State Mixed Crystal Defect Level Anion Vacancy 
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  1. 1).
    W.W.Scanlon: Solid State Physics Vol. 9, Academic Press, New York (1959) p.83Google Scholar
  2. 2).
    I.Ravich, B.A.Efimova and I.A.Smirnov: Semiconducting Lead Chalcogenides, Plenum Press, New York-London (1970) p.354Google Scholar
  3. 3).
    F.Kuchar, J.C.Ramage, R.A.Stradling and A.Lopez-Otero: J.Phys.C 10 (1977) 5101Google Scholar
  4. 4).
    G.Bauer, H.Burkhard, H.Heinrich and A.Lopez-Otero: J.Appl.Phys. 47 (1972) 1721Google Scholar
  5. 5).
    N.J.Parada and G.W.Pratt Jr: Phys.Rev.Lett. 22 (1969) 180Google Scholar
  6. 6).
    G.F.Koster and J.C.Slater: Phys.Rev. 95 (1954) 1167 and 96 (1954) 1208Google Scholar
  7. 7).
    L.A.Hemstreet Jr: Phys. Rev. B 11 (1975) 2260 and B 12 (1975) 1212Google Scholar
  8. 8).
    K.H. Gresslehner, W.Jantsch, K.Lischka, L.Palmetshofer and H.Heinrich: in Physics of Narrow Gap Semiconductors ed. by Rauluszkiewicz et al., Elsevier Scientific, Amsterdam, (1978) 205Google Scholar
  9. 9).
    K.H.Gresslehner and L.Palmetshofer: J.Appl.Phys. 51 (1980) 4735Google Scholar
  10. 10).
    K.H.Gresslehner, L.Palmetshofer and H.Heinrich: this conferenceGoogle Scholar
  11. 11).
    D.C.Tsui, G.Kaminsky and P.H.Schmidt: in Physics of Narrow Gap Semiconductors ed. by I.Rauluszkiewicz, Elsevier Scientific, Amsterdam (1978) p 405Google Scholar
  12. 12).
    H. Höchst, L.Ley and M.Cardona: Proc. 15th Int.Conf. on the Physics of Semiconductors, Kyoto 1980, J. Phys. Soc. Jap. 49 (1980) Suppl. A p 149Google Scholar
  13. 13).
    K.Lischka and W.Huber: Solid State Electronics 21 (1978) 1509Google Scholar
  14. 14).
    B.Schlicht, R.Dornhaus, G.Nimtz, L.D. Haas and T.Jakobus: Solid State Electronics 21 (1978) 1481Google Scholar
  15. 15).
    K.Lischka and H.Preier: Phys.Stat.Sol.(b) 101 (1980) K 129Google Scholar
  16. 16).
    K.Y.Duh and J.N.L.Zemel: Thin Solid Films 26 (1975) 165Google Scholar
  17. 17).
    P.Berndt, D.Genzow and K.H.Hermann: Phys.stat.sol.(a) 38 (1976) 497Google Scholar
  18. 18).
    A.Lopez-Otero: Thin Solid Films 49 (1978) 1Google Scholar
  19. 19).
    A.Jedrzejczka, D.Guillot and G.Martinez: Phys.Rev. B 17 (1978) 829Google Scholar
  20. 20).
    K.Lischka, L.Palmetshofer, K.H.Gresslehner and R.Grisar: Proc. 15th Int.Conf. on the Physics of Semiconductors, Kyoto 198O, J.Phys.Soc. Jap. 49 (1980) Suppl. A p.791Google Scholar

Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • G. Brunthaler
    • 1
  • K. Lischka
    • 1
  • L. Palmetshofer
    • 1
  1. 1.Institut für ExperimentalphysikUniversität LinzLinzAustria

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