Misfit strain in epitaxial IV–VI semiconductor films

  • E. J. Fantner
  • B. Ortner
  • W. Ruhs
  • A. Lopez-Otero
2. Crystal growth and new materials
Part of the Lecture Notes in Physics book series (LNP, volume 152)


Epitaxially grown single crystalline PbTe-films on BaF2 are subjected to a considerable strain due to the mis-match of the lattice constants and the thermal expansion coefficients. By magnetooptical and X-ray experiments it was possible to investigate separately the contributions of the compressive misfit strain and the thermally induced tensile strain. As a consequence of the opposite direction of the two effects, the PbTe/BaF2 films exhibit low strain below room temperature.


Lattice Constant Lattice Mismatch Misfit Dislocation Misfit Strain Liquid Helium Temperature 
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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • E. J. Fantner
    • 1
  • B. Ortner
    • 2
  • W. Ruhs
    • 1
  • A. Lopez-Otero
    • 3
  1. 1.Institut für PhysikMontanuniversitätLeobenAustria
  2. 2.Erich-Schmid-Institut für FestkörperphysikÖsterr.Akademie der WissenschaftenLeobenAustria
  3. 3.Institut für PhysikUniversität LinzLinzAustria

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