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Misfit strain in epitaxial IV–VI semiconductor films

  • E. J. Fantner
  • B. Ortner
  • W. Ruhs
  • A. Lopez-Otero
2. Crystal growth and new materials
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

Epitaxially grown single crystalline PbTe-films on BaF2 are subjected to a considerable strain due to the mis-match of the lattice constants and the thermal expansion coefficients. By magnetooptical and X-ray experiments it was possible to investigate separately the contributions of the compressive misfit strain and the thermally induced tensile strain. As a consequence of the opposite direction of the two effects, the PbTe/BaF2 films exhibit low strain below room temperature.

Keywords

Lattice Constant Lattice Mismatch Misfit Dislocation Misfit Strain Liquid Helium Temperature 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • E. J. Fantner
    • 1
  • B. Ortner
    • 2
  • W. Ruhs
    • 1
  • A. Lopez-Otero
    • 3
  1. 1.Institut für PhysikMontanuniversitätLeobenAustria
  2. 2.Erich-Schmid-Institut für FestkörperphysikÖsterr.Akademie der WissenschaftenLeobenAustria
  3. 3.Institut für PhysikUniversität LinzLinzAustria

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