Abstract
Epitaxially grown single crystalline PbTe-films on BaF2 are subjected to a considerable strain due to the mis-match of the lattice constants and the thermal expansion coefficients. By magnetooptical and X-ray experiments it was possible to investigate separately the contributions of the compressive misfit strain and the thermally induced tensile strain. As a consequence of the opposite direction of the two effects, the PbTe/BaF2 films exhibit low strain below room temperature.
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© 1982 Springer-Verlag
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Fantner, E.J., Ortner, B., Ruhs, W., Lopez-Otero, A. (1982). Misfit strain in epitaxial IV–VI semiconductor films. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_8
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DOI: https://doi.org/10.1007/3-540-11191-3_8
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