Photoluminescence CF Pb1−xSnxTe (x ∼ 0.2) crystals doped with Cd and In

  • I. I. Zasavitsky
  • B. N. Matsonashvili
  • G. V. Flusov
11. Impurities and Resonant States
Part of the Lecture Notes in Physics book series (LNP, volume 152)


It was found that by doping of Pb1−xSnxTe (0.16 ≲ x ≲ 0.22) crystals with Cd or In the photoluminescence,(PL) intensity is increased ∼ 5 and ∼ 20 times, respectively. The radiative transitions to deep impurity levels, the substantial (up to 5%) increasing of Eg and many (up to 8) spin-flip transitions in case of Cd are observed.


Epitaxial Layer Excitation Level High Excitation Level Deep Impurity Level Transition Number Increase 
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  1. I.
    Yu.V. Andreev, K.I. Geimant I.A. Drabkin A.V. Matveenkol E.A. Mozhaev, B.Ya. Moizhes: Fiz. Tekh. Poluprovodn. 9, (1975) 1873.Google Scholar
  2. 2.
    B.M. Vul, I.D. Voronova, G.A. Kaljuzhnaja, T.S. Mamedov T.Sh. Ragimova: Pis'ma v Zh. Eksp. Teor, Fiz. 29 (1979) 21.Google Scholar
  3. 3.
    K.J. Linden: J. Electrochem. Soc. 120 (1973) 1131Google Scholar
  4. 4.
    S.P. Chashchin, I.P. Guzhova, N.S. Baryshev, Yu.S. Kharionovskii: Sov, Fiz, Tekh. Poluprovodn, 13 (1979) 1654.Google Scholar
  5. 5.
    E. Silbergi A.Zemel: J. Electron. Materials 8 (1979) 99.Google Scholar
  6. 6.
    T.P. Abrjutina, K.I.Geimang B.G. Girich D.M. Gureevt I.I. Zasavitsky, A.V. Matveenkof B.N. Matsonashvili, M.I. Nikolaev, O.V. Pelevin, A.P.Shotov: Fiz, Tekh, Poluprovodn. 15 (1981) 949.Google Scholar
  7. 7.
    I.I. Zasavitsky B.N. Matsonashvili, P.M. Starik, G.V.Flusov: Fiz. Tekh. Poluprovodn, (in press).Google Scholar
  8. 8.
    H.R. Vydyanath: J. Appl. Phys. 47 (1976) 5003.Google Scholar
  9. 9.
    I.I. Zasavitsky, B.N. Matsonashvili, A.P. Shotov: Pis'ma v Zh. Eksp. Teor, Fiz, 32 (1980) 156Google Scholar
  10. 10.
    D.M. Gureev, I.I. Zasavitsky, B.N. Matsonashvili, A.P. Shotov: Proc. III Int. Conf. on Physics of Narrow Gap Semicond., PWN Polish Scientific Publishers, Warsaw, 1978, p.109.Google Scholar
  11. 11.
    H. Burkhard, G. Bauer, W. Zawadzki: Phys. Rev. B19 (1979) 5149.Google Scholar

Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • I. I. Zasavitsky
    • 1
  • B. N. Matsonashvili
    • 1
  • G. V. Flusov
    • 1
  1. 1.P.N. Lebedev Physical InstituteAcademy of Sciences of the USSRMoscowUSSR

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