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Photoluminescence CF Pb1−xSnxTe (x ∼ 0.2) crystals doped with Cd and In

  • I. I. Zasavitsky
  • B. N. Matsonashvili
  • G. V. Flusov
11. Impurities and Resonant States
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

It was found that by doping of Pb1−xSnxTe (0.16 ≲ x ≲ 0.22) crystals with Cd or In the photoluminescence,(PL) intensity is increased ∼ 5 and ∼ 20 times, respectively. The radiative transitions to deep impurity levels, the substantial (up to 5%) increasing of Eg and many (up to 8) spin-flip transitions in case of Cd are observed.

Keywords

Epitaxial Layer Excitation Level High Excitation Level Deep Impurity Level Transition Number Increase 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • I. I. Zasavitsky
    • 1
  • B. N. Matsonashvili
    • 1
  • G. V. Flusov
    • 1
  1. 1.P.N. Lebedev Physical InstituteAcademy of Sciences of the USSRMoscowUSSR

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