Ion-implantation-induced defect levels in Pb1−xSnxTe

  • K. H. Gresslehner
  • L. Palmetshofer
  • H. Heinrich
  • N. C. Sharma
11. Impurities and Resonant States
Part of the Lecture Notes in Physics book series (LNP, volume 152)


Ion-implantation (300 keV) induced lattice damage in thin Pb1−xSnxTe films has been investigated by Hall-effect in the temperature range of 300 – 4 K. Results are interpreted in terms of a defect level (tellurium-vacancy) whose energetic position is x- and temperature dependent (T=O, x=0:52 meV above conduction-band edge,, extrapolation for x=1: about 300 meV below the valence-band edge). For large values of x the tellurium vacancy is neutral which has consequences for the interpretation of the Pb1−xSnxTe phase-diagram.


Carrier Concentration Mixed Crystal Defect Level Lattice Damage Compositional Region 
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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • K. H. Gresslehner
    • 1
  • L. Palmetshofer
    • 1
  • H. Heinrich
    • 1
  • N. C. Sharma
    • 1
  1. 1.Institut für ExperimentalphysikUniversität LinzLinzAustria

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