Nonradiative recombination at deep impurity levels in p-type Hg1–xCdxTe

  • Dennis L. Polla
  • Walter Scott
  • Colin E. Jones
11. Impurities and Resonant States
Part of the Lecture Notes in Physics book series (LNP, volume 152)


In summary, we have applied various deep level spectroscopy techniques to characterize nonradiative recombination centers at near mid-gap and at 3/4 Eg in p-type Hg1-xCdxTe for 0.2 < x < 0.4. The near mid-gap center D1 in bulk grown p-tpye Hg1-xCdxTe has a density proportional to the number of acceptors present which are Hg+ vacancies. This D1 center determines the excess carrier lifetime in bulk grown p-type Hg1-xCdxTe.


Deep Level Carrier Lifetime Minority Carrier Lifetime Thermally Stimulate Current Nonradiative Recombination Center 
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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • Dennis L. Polla
    • 1
  • Walter Scott
    • 2
  • Colin E. Jones
    • 2
  1. 1.Honeywell Electro-Optics OperationsLexington
  2. 2.Honeywell Corporate Material Sciences CenterBloomington

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