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Nonradiative recombination at deep impurity levels in p-type Hg1–xCdxTe

  • 11. Impurities and Resonant States
  • Conference paper
  • First Online:
Physics of Narrow Gap Semiconductors

Part of the book series: Lecture Notes in Physics ((LNP,volume 152))

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Abstract

In summary, we have applied various deep level spectroscopy techniques to characterize nonradiative recombination centers at near mid-gap and at 3/4 Eg in p-type Hg1-xCdxTe for 0.2 < x < 0.4. The near mid-gap center D1 in bulk grown p-tpye Hg1-xCdxTe has a density proportional to the number of acceptors present which are Hg+ vacancies. This D1 center determines the excess carrier lifetime in bulk grown p-type Hg1-xCdxTe.

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References

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Author information

Authors and Affiliations

  1. Honeywell Electro-Optics Operations, 02173, Lexington, Massachusetts

    Dennis L. Polla

  2. Honeywell Corporate Material Sciences Center, 55420, Bloomington, Minnesota

    Walter Scott & Colin E. Jones

Authors
  1. Dennis L. Polla
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  2. Walter Scott
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  3. Colin E. Jones
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Editor information

E. Gornik H. Heinrich L. Palmetshofer

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© 1982 Springer-Verlag

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Polla, D.L., Scott, W., Jones, C.E. (1982). Nonradiative recombination at deep impurity levels in p-type Hg1–xCdxTe. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_76

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  • DOI: https://doi.org/10.1007/3-540-11191-3_76

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11191-7

  • Online ISBN: 978-3-540-38978-1

  • eBook Packages: Springer Book Archive

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