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Ionized-defect-scattering mobility in n-PbTe

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Physics of Narrow Gap Semiconductors

Part of the book series: Lecture Notes in Physics ((LNP,volume 152))

Abstract

Epitaxial layers of n-PbTe with mobilities up to 4×106 cm2/Vs at 4 K were grown by the hot-wall technique. The experimental data can be explained in terms of ionized-defect scattering, usina a potential consisting of a Coulomb part and a short-range part, together with the correct low-temperature value for the static dielectric constant (ε = 1300).

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References

  1. Y.I.Ravich, B.A.Efimova and V.I.Tamarchenko: phys.stat.sol. b 43 (1971) 11, 453.

    Google Scholar 

  2. W.Zawadzki: Adv.Phys. 23 (1974) 435.

    Google Scholar 

  3. A.Lopez-Otero: Thin Solid Films 49 (1978) 3.

    Google Scholar 

  4. H.Burkhard, G.Bauer, P.Grosse and A.Lopez-Otero: phys.stat.sol. b 76 (1976) 259.

    Google Scholar 

  5. E.M.Logothetis and H.Holloway: Solid State Comm. 8 (1970) 1937.

    Google Scholar 

  6. L.A.Hemstreet: Phys.Rev. B 11 (1975) 2260, B 12 (1975) 1212.

    Google Scholar 

  7. H.Holloway: in Physics of Thin Films, Vol 11, Academic Press (1980) p 105.

    Google Scholar 

  8. C.M.Wolfe and G.E.Stillman: Appl.Phys.Lett. 18 (1971) 205.

    Google Scholar 

  9. The mobility of sample 2805 in Fig.2 is somewhat lower than in Fig. 1. This is attributed to a slight deterioration of the thin film as a result of repeated thermal cycling-heating to room temperature and cooling down to 4 K again. The effect was observed in many high mobility samples.

    Google Scholar 

  10. W.Zawadzki: in Handbook on Semiconductors, Vol 1, North Holland (1981)

    Google Scholar 

  11. K.H.Gresslehner: Thesis, Institut fUr Experimentalphysik, Univ.Linz (1981).

    Google Scholar 

  12. C.A.Nanney, P.H.Schmidt, J.H.Wernick and J.P.Garno: J.Physique 29 (1968) C–4–34.

    Google Scholar 

  13. K.H.Gressleriner, W.Jantsch, K.Lischka, L.Palmetshofer and H.Heinrich: in Physics of Narrow Gap Semiconductors, Polish Scientific Publ. (1978) p 205.

    Google Scholar 

  14. R. Triboulet, G. Didier, A. Lasbley, F. Morales, B. Toulouse, C.M. Pelletier, R. Granger, S. Rolland: this conference.

    Google Scholar 

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Authors and Affiliations

  1. Institut für Experimentalphysik, Universität Linz, A-4040, Linz, Austria

    L. Palmetshofer, K. H. Gresslehner, L. Ratschbacher & A. Lopez-Otero

Authors
  1. L. Palmetshofer
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  2. K. H. Gresslehner
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  3. L. Ratschbacher
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  4. A. Lopez-Otero
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Editor information

E. Gornik H. Heinrich L. Palmetshofer

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© 1982 Springer-Verlag

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Palmetshofer, L., Gresslehner, K.H., Ratschbacher, L., Lopez-Otero, A. (1982). Ionized-defect-scattering mobility in n-PbTe. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_68

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  • DOI: https://doi.org/10.1007/3-540-11191-3_68

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11191-7

  • Online ISBN: 978-3-540-38978-1

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