Ionized-defect-scattering mobility in n-PbTe

  • L. Palmetshofer
  • K. H. Gresslehner
  • L. Ratschbacher
  • A. Lopez-Otero
10. Transport
Part of the Lecture Notes in Physics book series (LNP, volume 152)


Epitaxial layers of n-PbTe with mobilities up to 4×106 cm2/Vs at 4 K were grown by the hot-wall technique. The experimental data can be explained in terms of ionized-defect scattering, usina a potential consisting of a Coulomb part and a short-range part, together with the correct low-temperature value for the static dielectric constant (ε = 1300).


Hall Mobility Interstitial Atom Static Dielectric Constant Screen Coulomb Potential Coulomb Part 
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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • L. Palmetshofer
    • 1
  • K. H. Gresslehner
    • 1
  • L. Ratschbacher
    • 1
  • A. Lopez-Otero
    • 1
  1. 1.Institut für ExperimentalphysikUniversität LinzLinzAustria

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