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Modification of the classical magnetic freeze-out manifestations in n-type Hg1−xCdxTe(x > 18%) due to the presence of resonant levels

  • A. Raymond
  • J. L. Robert
  • R. L. Aulombard
  • C. Bousquet
  • O. Valassiades
  • M. Royer
10. Transport
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

Because of the high mobility of Hg1−xCdxTe compounds, the ultra quantum limit can be easily reached at rather low magnetic fields; this is a favourable argument to observe the magnetic freeze-out. In the high field limit to get the free carrier density, the geneal expression of the conductivity tensor σxx and σxy must be used \((\sigma _{xy} = \frac{{ne}}{B})\).

A correct analysis of the magnetic field and temperature dependence of the free carrier density brings out the magnetic freezeout

Keywords

Magnetic Field Dope Sample Donor Level Magnetic Field Dependence Indium Antimonide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • A. Raymond
    • 1
  • J. L. Robert
    • 1
  • R. L. Aulombard
    • 1
  • C. Bousquet
    • 1
  • O. Valassiades
    • 1
  • M. Royer
    • 2
  1. 1.C.E.E.S. (associé au C.N.R.S. LA 21)Université des Sciences et Techniques du Languedoc Place Eugène BataillonMontpellier cédexFrance
  2. 2.S.A.T. 41ParisFrance

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