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Growth of Sb2Te3 single crystals by hot-wall-epitaxy

  • A. Krost
  • P. Grosse
2. Crystal growth and new materials
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

Antimony-telluride (Sb2Te3) was grown epitaxially by Hot-Wall-technique on BaF2-substrates. The orientation is Sb2Te3(0001)1 [ BaF2(111)with the trigonal system of Sb2Te3 tilted by 60o against the BaF2(111)-system. Single-crystalline layers grow only at substrate temperatures >0.8Tm,(Tm=890K). In contrast to melt-grown crystals the free carrier concentration could be varied via the Te-partial pressure. The quality of the films is similar to that of crystals grown from the melt,as examinated by X-ray, IR- and Raman-experiments.

Keywords

Substrate Temperature Free Carrier Concentration Plasma Edge Polar Optical Phonon Trigonal System 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • A. Krost
    • 1
  • P. Grosse
    • 1
  1. 1.I. Physikalisches InstitutRWTH AachenAachenGermany

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