Growth of Sb2Te3 single crystals by hot-wall-epitaxy

  • A. Krost
  • P. Grosse
2. Crystal growth and new materials
Part of the Lecture Notes in Physics book series (LNP, volume 152)


Antimony-telluride (Sb2Te3) was grown epitaxially by Hot-Wall-technique on BaF2-substrates. The orientation is Sb2Te3(0001)1 [ BaF2(111)with the trigonal system of Sb2Te3 tilted by 60o against the BaF2(111)-system. Single-crystalline layers grow only at substrate temperatures >0.8Tm,(Tm=890K). In contrast to melt-grown crystals the free carrier concentration could be varied via the Te-partial pressure. The quality of the films is similar to that of crystals grown from the melt,as examinated by X-ray, IR- and Raman-experiments.


Substrate Temperature Free Carrier Concentration Plasma Edge Polar Optical Phonon Trigonal System 
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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • A. Krost
    • 1
  • P. Grosse
    • 1
  1. 1.I. Physikalisches InstitutRWTH AachenAachenGermany

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