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Tm1−xEuxSe: New narrow gap magnetic semiconductors

  • H. Boppart
  • P. Wachter
2. Crystal Growth and New Materials
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

In the Tm1−xEuxSe pseudobinary system the compounds are semiconductors in the composition range x>0.25. The 4f13 level of divalent Tm lies only 0.4 eV or less below the 5d6s conduction band. on single crystals we have measured on some semiconducting compositions the initial susceptibility, the magnetization in fields up to 100 kOe, the electrical conductivity as a function of temperature and the electrical resistivity and the specific volume under pressure.

Keywords

Electrical Resistivity Valence Change Initial Susceptibility Paramagnetic Curie Temperature Saturation Moment 
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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • H. Boppart
    • 1
  • P. Wachter
    • 1
  1. 1.Laboratorium für FestkbrperphysikZürichSwitzerland

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