Excess carrier lifetime in Hg1−xCdxTe by population modulation spectroscopy
A contactless optical technique for measuring carrier lifetimes and defect levels in Hg0.7Cd0.3Te is presented. The technique is based on measuring the modulation of the absorption of a probe beam with E < Eg in the presence of a pump beam with E > Eg. Initial data on near intrinsic and p-type samples indicates that the dominant recombination mechanism in stoichiometrically doped p-type samples is due to Shockley-Read defect levels associated with the mercury vacancies.
KeywordsPump Power Probe Beam Pump Beam Surface Recombination Velocity Probe Energy
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