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Excess carrier lifetime in Hg1−xCdxTe by population modulation spectroscopy

  • D. L. Polla
  • R. L. Aggarwal
  • J. A. Mroczkowski
  • J. F. Shanley
  • M. B. Reine
4. Optics
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

A contactless optical technique for measuring carrier lifetimes and defect levels in Hg0.7Cd0.3Te is presented. The technique is based on measuring the modulation of the absorption of a probe beam with E < Eg in the presence of a pump beam with E > Eg. Initial data on near intrinsic and p-type samples indicates that the dominant recombination mechanism in stoichiometrically doped p-type samples is due to Shockley-Read defect levels associated with the mercury vacancies.

Keywords

Pump Power Probe Beam Pump Beam Surface Recombination Velocity Probe Energy 
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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • D. L. Polla
    • 1
  • R. L. Aggarwal
    • 1
  • J. A. Mroczkowski
    • 2
  • J. F. Shanley
    • 2
  • M. B. Reine
    • 2
  1. 1.Francis Bitter National Magnet LaboratoryMassachusetts Institute of TechnologyCambridgeUSA
  2. 2.Honeywell Electro-Optics OperationsLexingtonUSA

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