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Calculation of the Auger lifetime in degenerate n-type (Hg,Cd)Te

  • T. N. Casselman
4. Optics
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

The lifetime, TAl due to the,two-band, Auger 1 recombination mechanism is calculated for degenerate n-type (Hg,Cd)Te as a function of equilibrium carrier concentration, no under low modulation. For no sufficiently large so that the Fermi energy, EF is at least a kBT above the conduction band minimum, τAl ∝ 1/no/γ where γ < 1. For x = 0.2 and 50K ≤ T ≤ 200K, 0.7 ≤ γ ≤ 0.8. For EF(no) at least 3 kBT below the conduction band minimum, τAl ∝ 1/no/2.It is also found that in the degenerate region, τAl decreases with T for fixed no.

Keywords

Fermi Energy Conduction Band Minimum Occupancy Probability Effective Threshold Ramp Function 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • T. N. Casselman
    • 1
  1. 1.Honeywell Corporate Technology CenterBloomingtonUSA

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