Giant nonlinearities, optical bistability and the optical transistor in narrow-gap semiconductors

  • S. D. Smith
4. Optics
Part of the Lecture Notes in Physics book series (LNP, volume 152)


Narrow gap semiconductors can have nonlinear third order susceptibilities Ξ(3) (ω:ω,−ω,ω) as high as 1.0 esu. The microscopic processes responsible for this have been identified as band-gap resonant saturation caused by laser-excited excess carriers. Signal processing devices operating at milliwatt powers are a consequence.


Optical Bistability Nonlinear Refraction Band Tail Saturation Behaviour Excess Carrier 
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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • S. D. Smith
    • 1
  1. 1.Department of PhysicsHeriot-Watt UniversityEdinburghScotland, UK

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