Advertisement

Giant nonlinearities, optical bistability and the optical transistor in narrow-gap semiconductors

  • S. D. Smith
4. Optics
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

Narrow gap semiconductors can have nonlinear third order susceptibilities Ξ(3) (ω:ω,−ω,ω) as high as 1.0 esu. The microscopic processes responsible for this have been identified as band-gap resonant saturation caused by laser-excited excess carriers. Signal processing devices operating at milliwatt powers are a consequence.

Keywords

Optical Bistability Nonlinear Refraction Band Tail Saturation Behaviour Excess Carrier 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1).
    D.A.B. Miller, S.D. Smith and B.S. Wherrett: Opt. Commun. 35 (1980) 221.Google Scholar
  2. 2).
    A. Miller, D.A.B. Miller and S.D.Smith: “Dynamical Nonlinear Optical Processes in Semiconductors” — a review, Advances in Physics, to be published.Google Scholar
  3. 3).
    D.A.B. Miller, M. Mozolowski, A. Miller and S.D. Smith: Opt. Commun. 27 (1973) 133.Google Scholar
  4. 4).
    D.L. Weaire, B.S. Wherrett, D.A.B. Miller and S.D. Smith: Opt. Lett. 4 (1979) 331.Google Scholar
  5. 5).
    D.A.B. Miller: Proc. Roy. Soc., to be published.Google Scholar
  6. 6).
    D.A.B. Miller, S.D. Smith and A.M. Johnston: Appl. Phys. Lett. 35 (1979) 658.Google Scholar
  7. 7).
    D.A.B. Miller, S.D. Smith and C.T. Seaton: 1st Int. Conf. and Workshop on Optical Bistability, Asheville, NC, 3–5 June 1980.Google Scholar
  8. 8).
    D.A.B. Miller and S.D. Smith: Opt. Commun. 31 (1979) 101.Google Scholar
  9. 9).
    G. Staupendahl and K. Schindler: Proc. 2nd Int. Symp. on Ultrafast Phenomena in Spectroscopy, Reinhardsbrunn, GDR, (1980) 437.Google Scholar
  10. 10).
    R.K. Jain and M.B. Klein: Appl. Phys. Lett. 35 (1979) 454.Google Scholar
  11. 11).
    D.A.B. Miller, R.G. Harrison, A.M. Johnston, C.T. Seaton and S.D. Smith: Opt. Commun. 32 (1980) 478.Google Scholar
  12. 12).
    H.A. MacKenzie, R.B. Dennis, D. Voge and S.D. Smith: Opt. Commun. 34 (1980) 205.Google Scholar
  13. 13).
    R.B. Dennis et al.: this Conference 5.l.Google Scholar
  14. 14).
    H.M. Gibbs, S.L. McCall, T.N.C. venkatesan, A.C. Gossard, H. Passman and W. Wiegmann: Appl. Phys. Lett. 35 (1979) 451.Google Scholar
  15. 15).
    R.K. Jain, M.B. Klein and R.C. Lind: Int. Q. Electronics Conf., Boston, 1980, Summaries, p.600.Google Scholar
  16. 16).
    A. Javan and P.L. Kelly: IEEE J. Quantum Electronics, QE2 (1966) 470.Google Scholar
  17. 17).
    D.A.B. Miller, C.T. Seaton, M. Prise and S.D. Smith: Phys. Rev. Lett. 47 (1981) 197.Google Scholar
  18. 18).
    D.G. Seiler and L.K. Hanes: Opt. Commun. 28 (1979) 326.Google Scholar
  19. 19).
    S.M. Ryvkin, A.A. Grinberg and N.I. Kramer: Soviet Phys. Solid State 7 (1966) 1766.Google Scholar
  20. 20).
    B.S. Wherrett and N. Higgins: Proc. Roy. Soc. (1981) to be published.Google Scholar

Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • S. D. Smith
    • 1
  1. 1.Department of PhysicsHeriot-Watt UniversityEdinburghScotland, UK

Personalised recommendations