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Structural and electrical properties of as grown CdxHg1−xTe epitaxial layers deposited by cathodic sputtering

  • R. Roussille
  • R. Boch
  • M. Dupuy
  • G. Rolland
2. Crystal growth and new materials
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

Epitaxial layers of cadmium mercury telluride are simultaneously grown onto several CdTe substrates (total area 20 cm2) by cathodic sputtering in a mercury vapour plasma. The transition region between the CdHgTe layer and the substrate is very narrow (thickness ≈ 80 nm) and the variation of composition across the surface of the layer (4 cm2) is less than ± 0.01 mole fraction CdTe. The Hall coefficient of CdHgTe epitaxial layers have been measured between 4 and 300 K. At 77 K the results concerning layers deposited at 300°C (Cd compontion of 0.20) are about n = 5.1016 cm −3 with a Hall mobility of 12000 cm2V−1sec 1 and p = 1.1017 cm−3 with a Hall mobility of 55 cm2V−1sec−1 for layers deposited at 250°C.

Keywords

Substrate Temperature Epitaxial Layer Electron Microprobe Analysis Hall Mobility Cadmium Mercury Telluride 
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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • R. Roussille
    • 1
  • R. Boch
    • 1
  • M. Dupuy
    • 2
  • G. Rolland
    • 2
  1. 1.CEA - CENG.LETI/LIRGrenoble CedexFrance
  2. 2.CEA -CENG.LETI/CRMGrenoble CedexFrance

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