Structural and electrical properties of as grown CdxHg1−xTe epitaxial layers deposited by cathodic sputtering
Epitaxial layers of cadmium mercury telluride are simultaneously grown onto several CdTe substrates (total area 20 cm2) by cathodic sputtering in a mercury vapour plasma. The transition region between the CdHgTe layer and the substrate is very narrow (thickness ≈ 80 nm) and the variation of composition across the surface of the layer (4 cm2) is less than ± 0.01 mole fraction CdTe. The Hall coefficient of CdHgTe epitaxial layers have been measured between 4 and 300 K. At 77 K the results concerning layers deposited at 300°C (Cd compontion of 0.20) are about n = 5.1016 cm −3 with a Hall mobility of 12000 cm2V−1sec 1 and p = 1.1017 cm−3 with a Hall mobility of 55 cm2V−1sec−1 for layers deposited at 250°C.
KeywordsSubstrate Temperature Epitaxial Layer Electron Microprobe Analysis Hall Mobility Cadmium Mercury Telluride
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- (1).H.KRAUS, S.G.PARKER and J.P.SMITH; J.Electrochem.Soc. 114, (1967) 616Google Scholar
- (2).G.COHEN-SOLAL, C.SELLA, D.IMHOFF and A.ZOZIME; Proc.6thInt. Vacuum Conf.1974 also in Jap.Appl.Phys.(suppl.2, pt.1) (1974) 517Google Scholar
- (3).R.H.CORNELY, L.SUCHON, T.GABARA, P.DIODATO; IEEE Transactions on Electron Devices, Ed 27, (1980) 29.Google Scholar
- (4).R.Roussille; J.of Crystal Growth (1981) In press.Google Scholar
- (5).A.ZOZIME, G.COHEN-SOLAL and F.BAILLY; Thin Solid Films, 70, (1980) 139.Google Scholar
- (6).J.LANGE; J.Appl.Phys., 35, (1964) 9.Google Scholar