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The investigation of the second phase in Hg1−xCdxTe crystals

  • Song Bing-wen
  • He Jing-fu
  • Ren Wan-xing
  • Tang Jia-tian
2. Crystal growth and new materials
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

A structural defect called the second phase has been observed in Hg1−xCdxTe crystals grown by the technique of quick directional freezing. The main composition of the second phase is Te.Cd and Hg contents in the second phase are much less than that in the other part of the crystals. The second phase is caused by the improper compensation of Hg and Te in the sealed quartz ampule.

Keywords

Infrared Detector Casting Rate Kunming Institute High Temperature Heat Treatment Ingot Axis 
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References

  1. 1).
    J.Blair and R.Newnham: Metallurgy of Elemental and Compound Semiconductors, (Interscience publishers, Inc., New York) 12 (1961) 393Google Scholar
  2. 2).
    J.L.Schmit and C.J.Speerschneider: Infrared Phys.8 (1968) 247Google Scholar
  3. 3).
    J.Steininger: J.Elect.Mat.Vol.5 No.3 (1976) 299Google Scholar
  4. 4).
    Unpublished work, Kunming Institute of PhysicsGoogle Scholar

Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • Song Bing-wen
    • 1
  • He Jing-fu
    • 1
  • Ren Wan-xing
    • 1
  • Tang Jia-tian
    • 1
  1. 1.Kunming Institute of PhysicsKunmingChina

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