Abstract
With the technique of molecular beam epitaxy, CdTe and CdxHg1−x Te (CMT) have been grown on CdTe (111)B substrates. The epiaxial temperatures are between 25°C and 250°C for CdTe and 120°C for CMT. These layers, with thickness up to 10μm, present a good cristallinity and low carrier concentrations at 77K. The low Hall mobility for MBE CMT can be improved by a post growth annealing.
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© 1982 Springer-Verlag
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Faurie, JP., Million, A. (1982). Molecular beam epitaxy of CdTe and CdxHg1−xTe. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_12
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DOI: https://doi.org/10.1007/3-540-11191-3_12
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