Molecular beam epitaxy of CdTe and CdxHg1−xTe

  • Jean-Pierre Faurie
  • Alain Million
2. Crystal growth and new materials
Part of the Lecture Notes in Physics book series (LNP, volume 152)


With the technique of molecular beam epitaxy, CdTe and CdxHg1−x Te (CMT) have been grown on CdTe (111)B substrates. The epiaxial temperatures are between 25°C and 250°C for CdTe and 120°C for CMT. These layers, with thickness up to 10μm, present a good cristallinity and low carrier concentrations at 77K. The low Hall mobility for MBE CMT can be improved by a post growth annealing.


Molecular Beam Epitaxy Effusion Cell RHEED Pattern CdTe Substrate Post Growth Annealing 
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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • Jean-Pierre Faurie
    • 1
  • Alain Million
    • 1
  1. 1.Laboratoire InfrarougeLETI/CENG 85 XGrenobleFrance

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