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Plasma reflection spectrum of the Pb 1−xSnxTe inhomogeneous layers and vapour transport process of Pb 1−xSnxTe

  • Yuan Shi-xin
  • Leng Jing
  • Yang Yong-nian
  • Xie Qin-xi
  • Si Sheng-lai
  • Yu Mei-fang
2. Crystal growth and new materials
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

The carrier concentration profile of P/P+Pb0.8Sn0.2Te LPE layers and isothermal diffusion layers are determined by the measurement of infrared plasma reflection. It is found that the important mechanism of diffusion can not be metal vacancies but interstitial metal defects and nonmetal vacancies. The horizontal vapour transport rate can be readily measured by balance method in the process of Pb1−xSnxTe vapour growth in a closed tube. The effect of the stoichiometric rate and the residual gas on the transport rate in the same tube is studied.

Keywords

Transport Rate Inhomogeneous Layer Metal Vacancy Transport Tube Isothermal Diffusion 
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References

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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • Yuan Shi-xin
    • 1
  • Leng Jing
    • 1
  • Yang Yong-nian
    • 1
  • Xie Qin-xi
    • 1
  • Si Sheng-lai
    • 1
  • Yu Mei-fang
    • 1
  1. 1.Shanghai Institute of Technical PhysicsAcademia SinicaUSSR

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