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Influence of impurity doping on the electrical properties of LPE grown Pb1−xSnxTe and PbSeyTe1−y

  • Z. Feit
  • A. Zemel
  • D. Eger
  • I. Sternberg
2. Crystal growth and new materials
Part of the Lecture Notes in Physics book series (LNP, volume 152)

Abstract

Pb1−xSnxTe (05⩽x⩽0.25) and PbSe0.08Te0.92 layers doped with In,Cd, T1, As, and Bi were grown by the LPE method. The doping characteristics and electrical properties of the epilayers were studied by direct Hall and resistivity measurements. The results are discussed in view of the existing theoretical models.

Keywords

Carrier Concentration Hall Mobility Liquid Phase Epitaxy Growth Solution Impurity Band 
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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • Z. Feit
    • 1
  • A. Zemel
    • 1
  • D. Eger
    • 1
  • I. Sternberg
    • 1
  1. 1.Solid State Physics DepartmentSoreq Nuclear Research CentreYavneIsrael

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