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Hot electrons in narrow gap semiconductors

  • B. L. Gelmont
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 133)

Keywords

Electron Temperature Drift Velocity Optical Phonon High Electric Field Heavy Hole 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    E.M. Conwell, High Field Transport in Semiconductors, Academic Press, New York and London, 1967.Google Scholar
  2. [2]
    J.E. Caroll, Hot Electron Microwave Generators, London 1970; M.E. Levinstein, Yu.K. Pozhela and M.S. Shur, The Gunn Effect, 1975 (in Russian).Google Scholar
  3. [3]
    J.E. Smith, M.I. Nathan, J.C. McGroddy and S.A. Porowski, Appl. Phys. Lett., 15, 242, (1969).Google Scholar
  4. [4]
    M. Rodot, Proc. X Intern. Conf. Phys. Semicond. Moscow, Nauka 1968, p. 639.Google Scholar
  5. [5]
    V.I. Ivanov-Omskii, B.T. Kolomiets, K.P. Smekalova and V.A. Smirnov, Fiz. Techn. Polupr., 2, 1197, (1968); V.I. Ivanov-Omskii, B.T. Kolomiets and V.A.Smirnov, Fiz. Techn. Polupr. 8, 620, (1974).Google Scholar
  6. [6]
    B. Ancker-Johnson and C.L. Dick, Physics of Semimetals and Narrow-gap Semiconductors, Dallas, 1970, Ed. D.L. Carter and R.T. Bate, Pergamon Press, New-York 1971, p. 523.Google Scholar
  7. [7]
    S.D. Beneslavskii, V.I. Ivanov-Omskii, B.T. Kolomiets and V.A. Smirnov, Fiz. Tverd. Tela, 16, 1620, 1974; Proc. Symp. on Plasma and Electrical Instabilities in Solids, Vilnius 1972, p. 231.Google Scholar
  8. [8]
    V.N. Kobyzev and A.S. Tager, Zh. Exp. Teor. Fiz. Pisma Red. 14, 164, (1971); Proc. Symp. on Plasma and Electrical Instabilities in Solids, Vilnius 1972, p. 191.Google Scholar
  9. [9]
    L.A. Bovina, V.K. Grigoryev, V.I. Stafeev and E.A. Sychevskaya. Proc. Symp. on Plasma and Electrical Instabilities in Solids, Vilnius 1972, p. 200.Google Scholar
  10. [10]
    C.T. Elliott and I.L. Spain, J. Phys. C 7, 727 (1974).Google Scholar
  11. [11]
    R. Dorhhaus, H. Happ, K.H. Müller, G. Nimtz, W. Schlabitz, P. Zaplinski and G. Bauer, Proc. XII Int. Conf. Phys. Semicond., Stuttgart, 1974, p.1157.Google Scholar
  12. [12]
    G. Nimtz, G. Bauer, R. Dornhaus and K.H. Müller, Phys. Rev. B 10, 3302 (1974).Google Scholar
  13. [13]
    N.B. Brandt, O.N. Belousova, L.A. Bovina, V.I. Stafeev and Ja.G. Ponomarev, Soviet Symp. on Narrow-gap Semiconductors and Semimetals, Lvov 1975, p. 21.Google Scholar
  14. [14]
    L.A. Bovina, Yu.N. Savchenko and V.I. Stafeev, Fiz. Techn. Polupr. 10, 1586 (1976); V.S. Vershinin, V.I. Stafeev and L.A. Bovina, ibid., 12, 899 (1978).Google Scholar
  15. [15]
    B.L. Gelmont, V.G. Golubev and V.I. Ivanov-Omskii, Fiz. Tverd. Tela, 20, 87, 1978; V.I. Ivanov-Omskii, R. Link and A.A.Malkova, Fiz. Techn. Polupr. 12, 855 (1978).Google Scholar
  16. [16]
    B.L. Gelmont, V.I. Ivanov-Omskii, N.N. Konstantinova, D.V.Mashovets, R.V. Parfenev and I.N. Yassievich, Proc. XIII Int. Conf. Phys. Semicond. Rome 1976, p. 471; Zh. Exp. Teor.Fiz. 71, 1572, (1976).Google Scholar
  17. [17]
    R. Dornhaus and G. Nimtz, Solid St. Comm. 27, 575 1978; Solid-State Electron. 21, 1471 (1978).Google Scholar
  18. [18]
    S.D. Beneslavskii and O. Ziep, Phys. Stat. Sol., 88, 221, (1978).Google Scholar
  19. [19]
    G.L. Bir, E. Normantas and G.E. Pikus, Fiz. Tverd. Tela 4, 1180, 1962; L.L. Korenblit and V.E. Sherstobitov, Fiz. Techn. Polupr. 2, 675, (1968) (Soviet Phys. 2, 564, (1968)); J.G. Broerman, Phys. Rev. 183, 754, 1969, W. Szymańska, P. Boguslawski and W. Zawadzki, phys. stat. solidi 65, 641 (1974).Google Scholar
  20. [20]
    B.L. Gelmont, V.I. Ivanov-Omskii and I.M. Tsidilkovskii, Usp. Fiz. Nauk, 120, 337 (1976).Google Scholar
  21. [21]
    L. Liu, Physics of Narrow-gap Semiconductors, Proc. III Intern. Conf., Warszawa 1978, Polish Scient. Publ., P. 151.Google Scholar
  22. [22]
    G. Bastard, Proc. XIV Intern. Conf. Phys. Semicond. Edinburgh 1978, p. 241; C. Verie, F. Raymond, F. Bailly, I. Vacquie, G. Weill, A. Kozacki and J. Rioux, Ibid, p. 241.Google Scholar
  23. [23]
    V.M. Micheev and R.V. Pomortsev, Fiz. Techn. Polupr. 11, 908, (1977).Google Scholar
  24. [24]
    A.R. Hutson, J.H. McFee and D.L. White, Phys. Rev. Lett. 7, 237, (1961).Google Scholar
  25. [25]
    I.I. Cottam and G.A. Saunders, J. Phys. Chem. Sol. 36, 187, (1975).Google Scholar
  26. [26]
    D. Sherrington, J. Phys., C. 4, 2771, 1971; S. Giulj, R.M. Pick and G. Martinez, Proc. XII Intern. Conf. Phys. Semiconduc. Stuttgart 1974, p. 204.Google Scholar
  27. [27]
    P.E. Peterson, J. Appl. Phys. 41, 3465, (1970).Google Scholar
  28. [28]
    A.R. Beattie and P.T. Landsberg, Proc. Roy Soc., A249, 16, (1959).Google Scholar
  29. [29]
    E.O. Kane, J. Phys. Chem. Sol 1, 249, (1957).Google Scholar
  30. [30]
    E. Antoncik and P.T. Landsberg, Proc. Phys. Soc. 82, 337, (1963).Google Scholar
  31. [31]
    B.L. Gelmont, Zh. Teor. Exp. Fiz. 75, 536, (1978).Google Scholar
  32. [32]
    R.N. Zitter, A.J. Strauss and A.E. Attard, Phys. Rev. 115, 266, (1959).Google Scholar
  33. [33]
    B.L. Gelmont, Fiz. Techn. Polupr. 6, 2263, (1972).Google Scholar
  34. [34]
    L. Liu, Phys. Lett. 45 A, 285, 1973; L. Liu and W. Leung, Phys. Rev. Lett. 33, 1145, (1974); Phys. Rev. B 12, 2336, (1975).Google Scholar
  35. [35]
    H. Krömer, Phys. Rev. 109, 1856, (1958).Google Scholar
  36. [36]
    R.F. Kazarinov and V.G. Skobov, Zh. Exp. Teor. Fiz. 44, 1368, (1968).Google Scholar
  37. [37]
    N.B. Brandt, E.A. Svistov, E.A. Svistova and G.D. Yakovlev, Fiz. Techn. Polupr. 6, 654, (1972).Google Scholar
  38. [38]
    R.D. Larrabee and W.A. Hickinbothem, Symp. on Plasma Effects in Solids, Paris 1964, p. 181.Google Scholar
  39. [39]
    V.L. Gurevich and Yu.A. Firsov, Zh. Exp. Teor. Fiz. 40, 199, (1961).Google Scholar
  40. [40]
    V. Evtuhov, Phys. Rev. 125, 1869, 1962; Y. Guldner, C. Rigaux, M. Grynberg and A. Mycielski, Phys. Rev. B 8, 3875, (1973); J. Kowalski and W. Zawadzki, Solid St. Comm. 13, 1433, (1973); Ibid. 15, 304, (1974); W. Leung and L. Liu, Phys. Rev., B 8, 3811, (1973); B.L. Gelmont and S.B. Sultanov, Fiz. Techn. Polupr. 12, 818, (1978).Google Scholar
  41. [41]
    V.M. Micheev and R.V. Pomortsev, Zh. Exp. Teor. Fiz. 75, 924, (1978).Google Scholar
  42. [42]
    W. Walukiewicz, J. Phys. C, 9, 1945, (1976); W. Szymańska, Physics of Narrow-gap Semiconductors, Proc. III Intern. Conf., Warszawa 1978, p. 357; T. Dietl, J.J. Dubowski and W. Szymańska, Proc. XIV Int. Conf. Phys. Semicond. Edinburgh 1978, p. 245.Google Scholar
  43. [43]
    W. Zawadzki, “New Developments in Semiconductors”, Ed. P.R. Wallace, Nordhoff, Leyden 1973, p. 441; W. Zawadzki, Surface Science 37, 218, (1973).Google Scholar

Copyright information

© Springer-Verlag 1980

Authors and Affiliations

  • B. L. Gelmont
    • 1
  1. 1.A.F.Ioffe Physical-Technical InstituteLeningradUSSR

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