Stress deformation effects on narrow gap semiconductors

Abstract

In this lecture, we have reported experimental results obtained by several groups in order to show the effect of uniaxial stress and hydrostatic pressure on zero gap materials (14). It has been seen that the uniaxial compressional stress open the zero gap induced by symmetry; this opening gives effect as well as on the carrier concentration through the density of states, than on the mobility. The hydrostatic pressure, changes the γ₆-γ₈ distance, and consequently as a consequence the shape of the bands, involving a variation of the effective masses, i.e. of the population and the mobility. It has been shown that the transition Semi-metal -Semi-conductor could be induced by the pressure.