Abstract
The salient features of InAs-GaSb and In1-xGaxAs-GaSb1-yAsy superlattices are summarized, including theoretical treatments, MBE growth, characterization of materials and heterojunctions, optical absorption, Shubnikov-de Haas measurements, and observation of semiconductor-semimetal transitions.
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Esaki, L. (1980). InAs-GaSb superlattices — synthesized narrow-gap semiconductors and semimetals. In: Zawadzki, W. (eds) Narrow Gap Semiconductors Physics and Applications. Lecture Notes in Physics, vol 133. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-10261-2_49
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DOI: https://doi.org/10.1007/3-540-10261-2_49
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