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InAs-GaSb superlattices — synthesized narrow-gap semiconductors and semimetals

  • L. Esaki
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 133)

Abstract

The salient features of InAs-GaSb and In1-xGaxAs-GaSb1-yAsy superlattices are summarized, including theoretical treatments, MBE growth, characterization of materials and heterojunctions, optical absorption, Shubnikov-de Haas measurements, and observation of semiconductor-semimetal transitions.

Keywords

Molecular Beam Epitaxy Heavy Hole Reflection High Energy Electron Diffraction Heteroepitaxial Growth Subband Energy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1980

Authors and Affiliations

  • L. Esaki
    • 1
  1. 1.IBM T. J. Watson Research CenterNew York

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