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Spin-flip Raman scattering and associated X(3) nonlinearities

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Narrow Gap Semiconductors Physics and Applications

Part of the book series: Lecture Notes in Physics ((LNP,volume 133))

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Abstract

Intra- and inter-band electronic transitions in semiconductors cause a variety of nonlinear optical processes such as stimulated Raman scattering (SRS), four-photon mixing (FPM), two-photon absorption (TPA), optical saturation and self-focussing, all of which are associated with the third order susceptibility X(3). In particular these effects are strongly enhanced for materials with a small energy gap which form the subject matter of the present work. Because of the close similarity between SRS, FPM and TPA, and because they provide a rather satisfying manifestation of the microscopic physics, I have chosen to concentrate on them as illustrations of nonlinear interactions of radiation with matter. The particular examples chosen are spin-flip Raman scattering and associated FPM, which depend upon an external magnetic field, and zero field TPA, where we have done a new calculation which takes better account of the energy bands involved tha n in previous work.

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Authors and Affiliations

  1. Department of Physics, Heriot-Watt University, Edinburgh, UK

    Carl R. Pidgeon

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  1. Carl R. Pidgeon
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Wlodek Zawadzki

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© 1980 Springer-Verlag

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Pidgeon, C.R. (1980). Spin-flip Raman scattering and associated X(3) nonlinearities. In: Zawadzki, W. (eds) Narrow Gap Semiconductors Physics and Applications. Lecture Notes in Physics, vol 133. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-10261-2_39

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  • DOI: https://doi.org/10.1007/3-540-10261-2_39

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-10261-8

  • Online ISBN: 978-3-540-38382-6

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